JS28F512M29EWHA

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JS28F512M29EWHA

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IC FLASH 512MBIT PARALLEL 56TSOP

  • FabricantMicron Technology Co., Ltd.

  • Pièce fabricant #JS28F512M29EWHA

  • En stock5714

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Spécifications

Attribut Valeur
Part Status Obsolete
Base Product Number JS28F512M29
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mbit
Memory Organization 64M x 8, 32M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 110ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 110 ns

Présentation

Description

The JS28F512M29EWHA is a flash memory component manufactured by Intel. This specific model is part of the StrataFlash® Embedded Memory family, which is designed for high-density storage applications. It features a capacity of 512 megabits and utilizes multi-level cell (MLC) technology to store two bits per cell, effectively doubling the memory capacity compared to single-level cell (SLC) flash.
Key features include a high-speed interface, low power consumption, and robust data retention and endurance capabilities, making it suitable for embedded systems, industrial devices, and consumer electronics. The memory operates at a wide range of supply voltages, providing flexibility for different application requirements.
The JS28F512M29EWHA supports asynchronous and synchronous read modes, providing versatility in accessing data. It is designed to be compatible with existing and legacy systems, ensuring ease of integration. The device also includes advanced security features such as block protection and password protection to safeguard data integrity. Overall, the JS28F512M29EWHA is a reliable flash memory solution for applications needing efficient storage with secure and flexible performance.

Equivalent

The JS28F512M29EWHA is a NOR flash memory chip. Equivalent products with similar specifications from other manufacturers might include the Spansion S29GL512, the Micron MT28EW512, or the Winbond W39V512F. These alternatives typically offer similar storage capacities, interface types, and voltage levels but always verify compatibility based on specific application requirements.

Features

The JS28F512M29EWHA is a 512 Mb (megabit) NOR flash memory chip designed for non-volatile storage applications. Key features include:
1. NOR Architecture: Offers fast random read times, making it suitable for code storage and execution (XIP - execute in place).
2. Density: Provides 512 Mb of storage capacity.
3. Interface: Typically supports parallel interface, which can facilitate faster data access compared to serial interfaces.
4. Sector Architecture: Organized in sectors, allowing for easy data management, with each sector capable of individual erase operations.
5. Data Retention: Excellent data retention capabilities, generally over 20 years, ensuring long-term reliability.
6. Endurance: Supports a high number of program/erase cycles, typically up to 100,000 cycles per sector.
7. Low Power Consumption: Features efficient power management for use in battery-powered devices.
8. Wide Temperature Range: Suitable for various environmental conditions, often supporting industrial temperature ranges.
9. Security Features: May include features like block protection to prevent unauthorized data modification.
This flash memory is commonly used in embedded systems, consumer electronics, and other applications requiring reliable and fast non-volatile storage.

Pinout

The JS28F512M29EWHA is a parallel NOR Flash memory chip manufactured by Intel/Micron, although specific datasheets should be consulted for the most accurate and detailed information. Typically, a chip in the JS28F512M29E series would have a pin count of around 56 pins when configured in a TSOP (Thin Small Outline Package) or 64 pins in a BGA (Ball Grid Array) package.
The key functions of the pins are generally as follows: address inputs for selecting memory locations, data inputs/outputs for data transfer, control signals like Chip Enable (CE), Output Enable (OE), and Write Enable (WE) for managing read/write operations, and power supply pins (Vcc and GND).
Always refer to the specific datasheet for the JS28F512M29EWHA to confirm the exact pin count, configuration, and function, as variations may exist based on packaging and specific manufacturer versions.

Manufacturer

The JS28F512M29EWHA is manufactured by Intel Corporation. Intel is a leading technology company known for designing and manufacturing semiconductor products, including microprocessors, integrated graphics chips, and flash memory. The company is headquartered in Santa Clara, California, and is recognized as one of the largest and most influential players in the semiconductor industry. Intel's products are utilized in various computing devices, including personal computers, servers, and embedded systems, making it a critical supplier to tech companies worldwide.

Application

The JS28F512M29EWHA is a NOR Flash memory chip commonly used in a variety of applications due to its non-volatile storage capabilities. It is often found in embedded systems, consumer electronics, and automotive applications where reliable data storage and fast read access are essential. Specific uses include firmware storage, boot code storage, and as a memory solution in devices that require frequent updates or high read speeds, such as GPS systems, industrial control units, and digital cameras. Its robust performance in extreme conditions also makes it suitable for aerospace and military applications.

Package

The JS28F512M29EWHA is a NOR Flash memory chip from Intel's StrataFlash lineup. It typically comes in a BGA (Ball Grid Array) package, which is compact and suitable for mounting on circuit boards with limited space.

Frequently Asked Questions


Q: What is the memory size and organization of the JS28F512M29EWHA?
A: It has a 512Mbit (64MB) density, configurable as 64M x 8-bit or 32M x 16-bit via the parallel interface.


Q: Is this component suitable for industrial temperature ranges?
A: Yes, its operating temperature range is -40°C to +85°C (TA), making it suitable for industrial applications.


Q: What is the access time and what voltage does it require?
A: The access time is 110 ns, and it operates with a supply voltage of 2.7V to 3.6V.


Q: What type of memory technology does this FLASH use?
A: It uses FLASH - NOR (Non-Volatile) technology, ideal for reliable code storage and random access.


Q: Can this device support both 8-bit and 16-bit data bus modes?
A: Yes, its memory organization supports both 64M x 8 (byte) and 32M x 16 (word) modes via the parallel interface.


Q: What is the write cycle time for word or page programming?
A: The write cycle time (Word, Page) is 110 ns, ensuring fast programming operations.


Q: What is the package type and mounting style?
A: It is offered in a 56-TFSOP (18.40mm Width) package, designed for Surface Mount mounting, with a 56-TSOP supplier device package.


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