IXXX200N65B4

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IXXX200N65B4

+Nomenclature

IGBT PT 650V 370A PLUS247

  • FabricantLa société ixys

  • Pièce fabricant #IXXX200N65B4

  • En stock8617

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Spécifications

Attribut Valeur
Series GenX4™, XPT™
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 370 A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 160A
Power - Max 1150 W
Switching Energy 4.4mJ (on), 2.2mJ (off)
Input Type Standard
Gate Charge 553 nC
Td (on / off) @ 25°C 62ns/245ns
Test Condition 400V, 100A, 1Ohm, 15V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Supplier Device Package PLUS247™-3
Base Product Number IXXX200
Current - Collector Pulsed (Icm) 1000 A

Présentation

Description

The IXXX200N65B4 is a high voltage, N-channel MOSFET designed for various power electronics applications. With a voltage rating of 650V and a current handling capability of 200A, this component is suitable for use in high-efficiency power supplies, motor drives, and inverter circuits. Its performance is enhanced by low on-resistance and fast switching speeds, making it ideal for applications requiring high efficiency and thermal management.
The device features a robust gate oxide structure, ensuring reliability under demanding conditions. Additionally, it is packaged in a TO-247 or similar format, allowing for effective heat dissipation. This MOSFET is commonly used in renewable energy systems, such as solar inverters, and in industrial automation where high power and voltage levels are encountered.
Overall, the IXXX200N65B4 is a key component for engineers aiming to design efficient and reliable power electronic systems.

Equivalent

The IXXX200N65B4 chip is a part of the Infineon CoolMOS series. Equivalent products include the Infineon IGBT series, the ON Semiconductor NTP60N65, and the STMicroelectronics STP200N65M5. For precise replacements, always check electrical specifications, package types, and application requirements to ensure compatibility.

Features

The IXXX200N65B4 is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: With a continuous drain current (I_D) rating of around 200A, it is capable of handling substantial loads.
3. Low On-Resistance: It offers a low on-resistance (R_DS(on)), which minimizes conduction losses, enhancing efficiency in power conversion.
4. Fast Switching Speed: The device supports fast switching, reducing losses during operation and improving overall efficiency in switching applications.
5. Thermal Performance: It features a robust thermal management capability, enabling it to operate effectively in high-temperature environments.
6. Package Type: Usually available in a TO-247 or similar package, ensuring ease of handling and assembly in various designs.
These features make the IXXX200N65B4 suitable for applications in power supplies, motor drives, and other industrial power electronics.

Pinout

The IXXX200N65B4 is a power MOSFET, specifically designed for high voltage applications. It features a pin count of 5, typically including the following pins:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - Connects to the load and carries the current when the device is on.
3. Source (S) - Connects to ground or the negative side of the load.
This device is optimized for high efficiency and low conduction loss, making it suitable for applications such as power supplies, motor drives, and converters. The specific pin arrangement may vary slightly depending on the package type, so it's essential to consult the manufacturer's datasheet for precise pin configuration and electrical characteristics.

Manufacturer

The IXXX200N65B4 is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon specializes in power semiconductors, automotive electronics, and industrial power control. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon provides a wide range of products that enable efficient energy management and connectivity in various applications, including automotive, industrial, and consumer electronics.
The IXXX200N65B4 is specifically a silicon carbide (SiC) MOSFET, designed for high-efficiency power conversion and management. Infineon's focus on innovation and sustainable technology positions it as a key player in the semiconductor industry, catering to the growing demand for energy-efficient solutions and advancements in electric mobility, renewable energy, and smart infrastructure.

Application

The IXXX200N65B4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) typically used in various application areas, including:
1. Inverters: For renewable energy systems like solar and wind power.
2. Motor Drives: In industrial automation and electric vehicles for efficient motor control.
3. Power Supplies: In high-efficiency switch-mode power supplies (SMPS).
4. Welding Equipment: In arc and resistance welding applications.
5. HVAC Systems: For controlling compressors and fan motors.
Its high voltage and current handling capabilities make it ideal for these demanding applications.

Package

The IXXX200N65B4 is typically housed in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and robust performance.

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