Images à titre indicatif uniquement
IXTP1R4N60P
+NomenclatureMOSFET N-CH 600V 1.4A TO220AB
-
FabricantLa société ixys
-
Pièce fabricant #IXTP1R4N60P
-
Fiche technique IXTP1R4N60P DataSheet
-
En stock6206
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | PolarHV™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 1.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9Ohm @ 700mA, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 5.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 140 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
