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IXTP02N120P
+NomenclatureMOSFET N-CH 1200V 200MA TO220AB
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FabricantLa société ixys
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Pièce fabricant #IXTP02N120P
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Package TO-220-3
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En stock2934
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 75Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 104 pF @ 25 V |
| Power Dissipation (Max) | 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Présentation
Description
The IXTP02N120P is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by IXYS Corporation. It is notable for its ability to handle high voltage and power applications with efficiency and reliability. Key specifications of the IXTP02N120P include a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 0.2A, making it suitable for use in applications such as power supplies, motor drives, and various switching applications where high voltage is a factor.
The device features a low on-resistance, which enhances its efficiency by minimizing power loss during operation. Additionally, the IXTP02N120P is designed with a fast switching capability, which contributes to its effectiveness in high-frequency applications. It is housed in a TO-220 package, providing ease of use in circuit design and ensuring effective heat dissipation during operation. Overall, the IXTP02N120P is a versatile component for engineers looking to implement robust high-voltage solutions.
The device features a low on-resistance, which enhances its efficiency by minimizing power loss during operation. Additionally, the IXTP02N120P is designed with a fast switching capability, which contributes to its effectiveness in high-frequency applications. It is housed in a TO-220 package, providing ease of use in circuit design and ensuring effective heat dissipation during operation. Overall, the IXTP02N120P is a versatile component for engineers looking to implement robust high-voltage solutions.
Equivalent
The IXTP02N120P is a power MOSFET. Equivalent products may include:
1. NTP1P50P - ON Semiconductor
2. STP3NK100Z - STMicroelectronics
3. IRFBG30 - Infineon Technologies
4. FDPF5N50NZ - ON Semiconductor
These equivalents are based on similar specifications such as voltage and current ratings. Always verify with detailed datasheets to ensure compatibility for specific applications.
1. NTP1P50P - ON Semiconductor
2. STP3NK100Z - STMicroelectronics
3. IRFBG30 - Infineon Technologies
4. FDPF5N50NZ - ON Semiconductor
These equivalents are based on similar specifications such as voltage and current ratings. Always verify with detailed datasheets to ensure compatibility for specific applications.
Features
The IXTP02N120P is an N-channel enhancement-mode power MOSFET. Here are some key features:
1. Voltage and Current Ratings: It typically has a high voltage rating, around 1200V, suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous current of approximately 2A, making it suitable for moderate power applications.
3. Low Rds(on): It features a low on-state resistance (Rds(on)), which reduces power loss during operation, enhancing efficiency.
4. Fast Switching: The MOSFET provides fast switching capabilities, which is ideal for high-frequency applications.
5. Ruggedness: Designed to be robust, it can withstand challenging electrical conditions, providing reliability in harsh environments.
6. Package Type: Often available in a TO-220 package, allowing for easy mounting and good thermal performance.
7. Applications: Commonly used in power conversion, motor control, and high-voltage power supplies.
These features make it suitable for various applications requiring efficient power management and high-voltage handling capabilities.
1. Voltage and Current Ratings: It typically has a high voltage rating, around 1200V, suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous current of approximately 2A, making it suitable for moderate power applications.
3. Low Rds(on): It features a low on-state resistance (Rds(on)), which reduces power loss during operation, enhancing efficiency.
4. Fast Switching: The MOSFET provides fast switching capabilities, which is ideal for high-frequency applications.
5. Ruggedness: Designed to be robust, it can withstand challenging electrical conditions, providing reliability in harsh environments.
6. Package Type: Often available in a TO-220 package, allowing for easy mounting and good thermal performance.
7. Applications: Commonly used in power conversion, motor control, and high-voltage power supplies.
These features make it suitable for various applications requiring efficient power management and high-voltage handling capabilities.
Pinout
The IXTP02N120P is a power MOSFET, specifically an N-channel enhancement mode transistor. It typically comes in a TO-220 package. The TO-220 package generally has three pins:
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output side of the MOSFET. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the input side of the MOSFET, connected to the negative or ground in most circuits. It serves as the source of electrons flowing through the device.
The IXTP02N120P is designed for high voltage applications with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 2A. It is used in applications requiring high efficiency and fast switching, such as power supplies and motor control systems.
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output side of the MOSFET. When the MOSFET is on, current flows from the drain to the source.
3. Source (S): This is the input side of the MOSFET, connected to the negative or ground in most circuits. It serves as the source of electrons flowing through the device.
The IXTP02N120P is designed for high voltage applications with a maximum drain-source voltage (V_DS) of 1200V and a continuous drain current (I_D) of 2A. It is used in applications requiring high efficiency and fast switching, such as power supplies and motor control systems.
Manufacturer
The IXTP02N120P is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of power semiconductors and integrated circuits. Founded in 1983, IXYS is known for its wide range of products, including power MOSFETs, IGBTs, thyristors, rectifiers, and other components used in power management and control applications. The company serves various industries, including telecommunications, automotive, industrial, and consumer electronics, providing solutions that enhance energy efficiency and performance. In 2018, IXYS was acquired by Littelfuse, Inc., a global manufacturer of circuit protection products, thereby expanding its reach and capabilities in the semiconductor market.
Application
The IXTP02N120P is a N-channel MOSFET known for high voltage handling and efficient switching characteristics. Its application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Drives: Suitable for controlling DC motors in industrial and automotive applications.
3. Inverters: Employed in DC-AC inverters for solar power systems and uninterruptible power supplies (UPS).
4. LED Drivers: Utilized in LED lighting systems for efficient power regulation.
5. Relay Replacement: Acts as a solid-state switch in various electronic circuits.
6. Consumer Electronics: Integrated into devices requiring efficient load switching and voltage regulation.
Its robust design allows for use in high-voltage, high-current applications.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Drives: Suitable for controlling DC motors in industrial and automotive applications.
3. Inverters: Employed in DC-AC inverters for solar power systems and uninterruptible power supplies (UPS).
4. LED Drivers: Utilized in LED lighting systems for efficient power regulation.
5. Relay Replacement: Acts as a solid-state switch in various electronic circuits.
6. Consumer Electronics: Integrated into devices requiring efficient load switching and voltage regulation.
Its robust design allows for use in high-voltage, high-current applications.
Package
The IXTP02N120P is a power MOSFET that typically comes in a TO-220 package. This package type is known for its ability to handle higher power and its three-pin configuration, making it suitable for various power switching applications.
