Images à titre indicatif uniquement
IXTA26P10T
+NomenclatureMOSFET P-CH 100V 26A TO263
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FabricantLa société ixys
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Pièce fabricant #IXTA26P10T
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Fiche technique IXTA26P10T DataSheet
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En stock3962
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Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | TrenchP™ |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 26A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 90mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 52 nC @ 10 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 3820 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
