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IXTA08N100P
+NomenclatureMOSFET N-CH 1000V 800MA TO263
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FabricantLa société ixys
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Pièce fabricant #IXTA08N100P
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En stock7366
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 800mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 20Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 4V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 11.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 240 pF @ 25 V |
| Power Dissipation (Max) | 42W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
