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IXFX420N10T
+NomenclatureMOSFET N-CH 100V 420A PLUS247-3
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FabricantLa société ixys
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Pièce fabricant #IXFX420N10T
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En stock9396
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Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Trench |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 420A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.6mOhm @ 60A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 670 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 47000 pF @ 25 V |
| Power Dissipation (Max) | 1670W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™-3 |
Présentation
Description
Key specifications include:
- N-channel MOSFET: Enhances electron flow, reducing resistance and improving efficiency.
- High current capacity: Can handle currents up to 420A.
- Voltage rating: Can operate at drain-source voltages up to 100V.
- Low on-resistance: Minimizes power loss and heat generation during operation.
- Rugged design: Built to withstand high levels of electrical stress and environmental conditions.
The IXFX420N10T's robust performance and reliability make it a preferred choice in industrial and commercial power applications. Its design allows for improved energy efficiency and thermal management, which are critical for maintaining performance and longevity in demanding environments.
Equivalent
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 420A, making it suitable for high-power applications.
2. R_DS(on): The on-resistance is typically low, contributing to efficient power management with reduced energy loss.
3. High-Speed Switching: The device supports fast switching speeds, which is beneficial for applications requiring rapid operation.
4. Rugged Design: It is designed to handle high energy in avalanche and commutation modes, ensuring reliability under demanding conditions.
5. Thermal Management: Offers efficient thermal performance, which is critical for minimizing overheating in high-current operations.
6. Package: Available in a TO-264 package, facilitating easy installation and integration into existing circuits.
These features make the IXFX420N10T an ideal choice for applications such as motor drives, power supplies, and other high-current, high-voltage applications.
Pinout
1. Gate (G): Used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET.
3. Source (S): The terminal through which the main current enters the MOSFET.
This MOSFET is characterized by its high current capacity, low on-state resistance, and fast switching properties, making it suitable for various high-efficiency power supply and motor control applications. Always refer to the device's datasheet for specific electrical characteristics and pin configuration.
Manufacturer
Application
1. Power Supplies: Used in both AC-DC and DC-DC converters for efficient energy conversion.
2. Motor Drives: Suitable for controlling and driving motors in industrial and automotive applications.
3. Inverters: Integral in inverters for renewable energy systems like solar inverters.
4. Load Switches: Acts as a reliable switch in various load control applications.
5. Battery Management Systems: Used for battery protection and charging circuits.
6. Lighting: Employed in LED drivers and other lighting control systems for energy efficiency.