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IXFK26N90
+NomenclatureMOSFET N-CH 900V 26A TO-264
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FabricantLa société ixys
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Pièce fabricant #IXFK26N90
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Fiche technique IXFK26N90 DataSheet
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Spécifications
| Attribut | Valeur |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain(Id) @ 25°C | 26A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 300mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 240 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 10800 pF @ 25 V |
| Power Dissipation (Max) | 560W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) |
