Images à titre indicatif uniquement
IXFH72N30X3
+NomenclatureMOSFET N-CH 300V 72A TO247
-
FabricantLa société ixys
-
Pièce fabricant #IXFH72N30X3
-
Fiche technique IXFH72N30X3 DataSheet
-
En stock8709
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Series | HiPerFET™, Ultra X3 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 36A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXFH72 |
Présentation
Description
The IXFH72N30X3 is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 300V and a continuous drain current (I_D) rating of 72A, making it suitable for high-voltage and high-current tasks. The device exhibits low on-resistance (R_DS(on)), which reduces power loss and improves efficiency in applications such as power converters, motor drives, and industrial equipment.
With a fast switching capability, the IXFH72N30X3 is ideal for applications that require quick transitions between on and off states, enhancing overall system performance. Additionally, it has a high thermal stability and can operate at elevated temperatures, ensuring reliability in demanding environments.
The MOSFET is housed in a TO-247 package, facilitating effective heat dissipation. Its robust design and specifications make it a preferred choice for engineers looking to implement efficient power management solutions in various electronic systems.
With a fast switching capability, the IXFH72N30X3 is ideal for applications that require quick transitions between on and off states, enhancing overall system performance. Additionally, it has a high thermal stability and can operate at elevated temperatures, ensuring reliability in demanding environments.
The MOSFET is housed in a TO-247 package, facilitating effective heat dissipation. Its robust design and specifications make it a preferred choice for engineers looking to implement efficient power management solutions in various electronic systems.
Equivalent
The IXFH72N30X3 is a high-voltage N-channel MOSFET. Equivalent products include the Infineon IPD70N30P4, Vishay Si7830DP, and STMicroelectronics STP75NF30. Ensure to check specific application requirements like RDS(on), VDS, and package type for compatibility. Always verify datasheets for exact specifications before substitution.
Features
The IXFH72N30X3 is a high-performance N-channel MOSFET designed for use in power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 300V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 72A, offering robust performance in power circuits.
3. Low On-Resistance: With a low R_DS(on) of approximately 0.14 ohms, it ensures minimal power loss during operation.
4. Fast Switching: It provides rapid switching capabilities, making it ideal for high-efficiency converters and inverters.
5. Thermal Performance: The MOSFET has a high thermal stability, allowing for reliable operation at elevated temperatures.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easy integration into different circuit designs.
These features make the IXFH72N30X3 suitable for applications such as power supplies, motor drives, and renewable energy systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 300V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of 72A, offering robust performance in power circuits.
3. Low On-Resistance: With a low R_DS(on) of approximately 0.14 ohms, it ensures minimal power loss during operation.
4. Fast Switching: It provides rapid switching capabilities, making it ideal for high-efficiency converters and inverters.
5. Thermal Performance: The MOSFET has a high thermal stability, allowing for reliable operation at elevated temperatures.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easy integration into different circuit designs.
These features make the IXFH72N30X3 suitable for applications such as power supplies, motor drives, and renewable energy systems.
Pinout
The IXFH72N30X3 is a high-power N-channel MOSFET with a pin count of 4. Its primary functions include switching and amplification in power electronics applications. The pins are typically designated as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal from which the current enters the MOSFET.
4. Tab (T): Usually connected to the source for heat dissipation.
This device is commonly used in power supplies, motor drives, and other applications requiring efficient power management. Its specifications include a high current rating and low on-resistance, making it suitable for high-efficiency designs. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings.
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal from which the current enters the MOSFET.
4. Tab (T): Usually connected to the source for heat dissipation.
This device is commonly used in power supplies, motor drives, and other applications requiring efficient power management. Its specifications include a high current rating and low on-resistance, making it suitable for high-efficiency designs. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings.
Manufacturer
The IXFH72N30X3 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is a leading company in the field of power semiconductor devices and integrated circuits. They specialize in the design and production of products for applications involving high voltage, high current, and high-frequency power electronics. Their offerings include MOSFETs, IGBTs, diodes, and other semiconductor components used in various sectors such as industrial, automotive, telecommunications, and renewable energy. With a strong focus on innovation and advanced technology, IXYS serves a global market, providing solutions that enhance energy efficiency and performance in electronic systems.
Application
The IXFH72N30X3 is a high-power MOSFET used in various applications, including:
1. Switching Power Supplies: Efficiently converting electrical power in devices like chargers and adapters.
2. Motor Drives: Control and drive electric motors in industrial and automotive applications.
3. DC-DC Converters: Used in renewable energy systems, such as solar inverters.
4. Inverters: Applied in uninterruptible power supplies (UPS) and grid-tied systems.
5. Audio Amplifiers: Enhancing performance in high-fidelity sound systems.
Its high voltage and current ratings make it suitable for demanding electrical environments.
1. Switching Power Supplies: Efficiently converting electrical power in devices like chargers and adapters.
2. Motor Drives: Control and drive electric motors in industrial and automotive applications.
3. DC-DC Converters: Used in renewable energy systems, such as solar inverters.
4. Inverters: Applied in uninterruptible power supplies (UPS) and grid-tied systems.
5. Audio Amplifiers: Enhancing performance in high-fidelity sound systems.
Its high voltage and current ratings make it suitable for demanding electrical environments.
Package
The IXFH72N30X3 is typically packaged in a TO-220 format, which is a three-lead package commonly used for power transistors and MOSFETs, providing efficient heat dissipation and easy mounting on heat sinks.
