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IXFH22N65X2
+NomenclatureMOSFET N-CH 650V 22A TO247
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FabricantLa société ixys
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Pièce fabricant #IXFH22N65X2
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Package TO-247-3
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En stock6630
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HiPerFET™, Ultra X2 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 160mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 1.5mA |
| GateCharge(Qg)(Max)@Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2310 pF @ 25 V |
| PowerDissipation(Max) | 390W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247 (IXTH) |
Présentation
Description
The IXFH22N65X2 is a robust power MOSFET designed for high-efficiency applications. It belongs to the HiPerFET™ family, which is known for its high-speed switching capabilities and rugged performance. With a voltage rating of 650V and a continuous drain current of 22A, it is suitable for demanding environments, including power conversion and motor control.
This MOSFET features low on-resistance, minimizing power loss and improving overall efficiency. The device is equipped with advanced avalanche capabilities and a fast intrinsic diode, making it ideal for hard-switching and resonant mode applications. Its TO-247 package offers excellent thermal performance, allowing for efficient heat dissipation.
The IXFH22N65X2 is commonly used in applications such as switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and industrial inverters. Its high-speed performance and reliability make it a preferred choice for engineers seeking to optimize power management in electronic systems.
This MOSFET features low on-resistance, minimizing power loss and improving overall efficiency. The device is equipped with advanced avalanche capabilities and a fast intrinsic diode, making it ideal for hard-switching and resonant mode applications. Its TO-247 package offers excellent thermal performance, allowing for efficient heat dissipation.
The IXFH22N65X2 is commonly used in applications such as switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and industrial inverters. Its high-speed performance and reliability make it a preferred choice for engineers seeking to optimize power management in electronic systems.
Equivalent
The IXFH22N65X2 is a power MOSFET, and equivalent products may include:
1. STMicroelectronics STP24N65M2
2. Infineon IPP65R045C7
3. NXP PSMN1R2-60PS
4. Vishay SiHG22N65E
These alternatives can vary slightly in specifications, so it's crucial to verify the specific parameters like voltage, current ratings, and package type to ensure compatibility with your application.
1. STMicroelectronics STP24N65M2
2. Infineon IPP65R045C7
3. NXP PSMN1R2-60PS
4. Vishay SiHG22N65E
These alternatives can vary slightly in specifications, so it's crucial to verify the specific parameters like voltage, current ratings, and package type to ensure compatibility with your application.
Features
The IXFH22N65X2 is a power MOSFET designed for high-efficiency switching applications. Here are its key features:
1. Voltage and Current Ratings: It has a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 22A, making it suitable for high-voltage applications.
2. RDS(on): The on-resistance is typically low, which minimizes conduction losses and enhances efficiency.
3. Package: It is housed in a TO-247 package, providing a good balance between thermal performance and size.
4. Temperature: The maximum operating junction temperature is typically around 150°C.
5. Switching Performance: It offers fast switching speeds, reducing transition losses during operation.
6. Avalanche Ruggedness: It is designed to handle energy surges, enhancing its reliability in demanding applications.
7. Applications: Suitable for use in power supply circuits, motor drivers, and other power conversion systems.
These features make the IXFH22N65X2 a versatile component for various electronic applications requiring efficient power handling.
1. Voltage and Current Ratings: It has a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 22A, making it suitable for high-voltage applications.
2. RDS(on): The on-resistance is typically low, which minimizes conduction losses and enhances efficiency.
3. Package: It is housed in a TO-247 package, providing a good balance between thermal performance and size.
4. Temperature: The maximum operating junction temperature is typically around 150°C.
5. Switching Performance: It offers fast switching speeds, reducing transition losses during operation.
6. Avalanche Ruggedness: It is designed to handle energy surges, enhancing its reliability in demanding applications.
7. Applications: Suitable for use in power supply circuits, motor drivers, and other power conversion systems.
These features make the IXFH22N65X2 a versatile component for various electronic applications requiring efficient power handling.
Pinout
The IXFH22N65X2 is a semiconductor device, specifically a power MOSFET. It typically has a three-pin configuration, which is standard for most discrete power MOSFETs. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing or preventing the flow of current between the drain and source.
2. Drain (D): This pin is connected to the main current path of the MOSFET. When the device is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or reference voltage in a circuit. It serves as the return path for the current flowing through the MOSFET.
The IXFH22N65X2 is designed for high-efficiency power conversion and switching applications, thanks to its high voltage rating and ability to handle significant current loads.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing or preventing the flow of current between the drain and source.
2. Drain (D): This pin is connected to the main current path of the MOSFET. When the device is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or reference voltage in a circuit. It serves as the return path for the current flowing through the MOSFET.
The IXFH22N65X2 is designed for high-efficiency power conversion and switching applications, thanks to its high voltage rating and ability to handle significant current loads.
Manufacturer
The IXFH22N65X2 is manufactured by IXYS Corporation. IXYS is a company known for producing power semiconductors and integrated circuit technologies. Founded in 1983 and headquartered in Milpitas, California, IXYS specializes in a variety of electronic components used in power conversion, motor control, power management, and other high-power applications. The company serves a wide range of industries, including telecommunications, automotive, industrial, medical, and renewable energy sectors. IXYS is recognized for its innovations in power semiconductor technologies, including MOSFETs, IGBTs, diodes, and thyristors, making it a significant player in the field of power electronics. In 2017, IXYS was acquired by Littelfuse, Inc., a global manufacturer of circuit protection, power control, and sensing products.
Application
The IXFH22N65X2 is a high-voltage, N-channel MOSFET commonly used in applications requiring efficient power conversion. Key application areas include:
1. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
2. Motor Control: Used in electric motor drives for industrial, automotive, and consumer applications.
3. Inverters: Essential in DC-AC conversion, particularly in renewable energy systems like solar inverters.
4. Lighting: Employed in LED drivers and ballast circuits for high-efficiency lighting solutions.
5. Telecommunications: Applied in power amplification and distribution systems.
The device is valued for its low on-resistance and fast switching capabilities, making it suitable for high-efficiency, high-frequency applications.
1. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
2. Motor Control: Used in electric motor drives for industrial, automotive, and consumer applications.
3. Inverters: Essential in DC-AC conversion, particularly in renewable energy systems like solar inverters.
4. Lighting: Employed in LED drivers and ballast circuits for high-efficiency lighting solutions.
5. Telecommunications: Applied in power amplification and distribution systems.
The device is valued for its low on-resistance and fast switching capabilities, making it suitable for high-efficiency, high-frequency applications.
Package
The IXFH22N65X2 is a power MOSFET, and its package type is TO-247.
