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IXFH12N100F
+NomenclatureMOSFET N-CH 1000V 12A TO247AD
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FabricantLittelfuse sa.
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Pièce fabricant #IXFH12N100F
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En stock8512
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Spécifications
| Attribut | Valeur |
| Series | HiPerFET™, F Class |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD (IXFH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXFH12 |
Présentation
Description
This MOSFET is particularly useful in applications such as DC-DC converters, motor drives, and power inverters, where reliable performance under high-voltage conditions is crucial. The IXFH12N100F also offers fast switching speeds, allowing for improved response times in switching circuits.
Additionally, it comes in a TO-220 package, facilitating easy heat dissipation and installation in various electronic designs. Users can expect durability and stability from this component, making it a popular choice among engineers seeking robust solutions for high-power applications.
Equivalent
1. IRF120 (International Rectifier)
2. STP12NM100 (STMicroelectronics)
3. FQP12N100 (Fairchild Semiconductor)
4. SP100N10 (Sanken)
Always check specifications for exact parameters to ensure compatibility.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 12A, which is beneficial for power management.
3. Low Rds(on): With a low on-resistance (Rds(on)) of approximately 0.24 ohms, it ensures minimal conduction losses.
4. Fast Switching: The device supports fast switching speeds, enhancing efficiency in switching applications.
5. Thermal Performance: It has a robust thermal characteristic, which allows for effective heat dissipation and better reliability.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy mounting and heat sinking.
7. Applications: Suitable for use in power supplies, motor drivers, and other switching applications where efficiency and reliability are critical.
These features make the IXFH12N100F a versatile choice for various electronic applications.
Pinout
1. Gate (G): This pin controls the MOSFET and is used to turn it on and off by applying a voltage.
2. Drain (D): The drain pin connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): The source pin connects to ground or the negative side of the circuit; current flows into the source when the MOSFET is conducting.
This device is designed for high-voltage applications up to 1000V and has a current rating of 12A. It is commonly used in power conversion and switching applications.
Manufacturer
Application
1. Switching Power Supplies: For efficient power conversion in AC-DC and DC-DC converters.
2. Induction Heating: Utilized in high-frequency inverters for heating applications.
3. Motor Drives: Employed in controlling large motors for industrial and automotive uses.
4. Lighting Control: Used in high-intensity discharge (HID) lighting systems.
5. RF Amplifiers: Suitable for radio frequency applications due to its high-frequency performance.
Its high voltage rating and low on-resistance make it ideal for these demanding environments.