IXBX75N170

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IXBX75N170

+Nomenclature

IGBT 1700V 200A 1040W PLUS247

  • FabricantLa société ixys

  • Pièce fabricant #IXBX75N170

  • Package TO-247-3

  • En stock4966

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Spécifications

Attribut Valeur
Package Tube
Series BIMOSFET™
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 1700 V
Current-Collector(Ic)(Max) 200 A
Current-CollectorPulsed(Icm) 580 A
Vce(on)(Max)@VgeIc 3.1V @ 15V, 75A
Power-Max 1040 W
InputType Standard
GateCharge 350 nC
ReverseRecoveryTime(trr) 1.5 µs
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3 Variant

Présentation

Description

The IXBX75N170 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module designed for power electronics applications. Key features include:
- Voltage Rating: 1700V
- Current Rating: 75A
- Low Saturation Voltage (VCE(sat)): Ensures efficient switching with reduced power loss.
- Robust Construction: Suitable for industrial, renewable energy, and motor drive systems.
- Fast Switching: Optimized for high-frequency operations.
It is commonly used in inverters, converters, and high-power switching circuits where reliability and efficiency are critical.

Features

The IXBX75N170 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 1700V
- Current Rating: 75A
- Low VCE(sat): Ensures reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Short-Circuit Withstand Time: Enhances reliability in fault conditions
- Temperature Range: Operates efficiently at high temperatures
- Robust & Rugged Design: Suitable for industrial and power electronics
Common applications include motor drives, inverters, and power supplies. Its high efficiency and durability make it ideal for demanding environments.

Pinout

The IXBX75N170 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) module.
- Pin Count: Typically 4 main terminals (Collector, Emitter, Gate, and sometimes an auxiliary Emitter for gate drive stability).
- Function: Designed for high-power switching applications (e.g., motor drives, inverters) with:
- Voltage Rating: 1700V
- Current Rating: 75A
- Low VCE(sat) for efficient conduction.
Exact pin configuration may vary by package (e.g., TO-247 or module), so refer to the datasheet for specifics.

Application

The IXBX75N170 is a high-voltage N-channel IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications. Key application areas include:
- Industrial Motor Drives: Used in variable-speed motor control for efficiency.
- Renewable Energy Systems: Inverters for solar and wind power conversion.
- Uninterruptible Power Supplies (UPS): Ensures stable power delivery.
- Welding Equipment: Provides high-current switching for precision control.
- Induction Heating: Efficient power management in heating systems.
Its high voltage (1700V) and robust performance make it suitable for demanding high-power switching tasks.

Package

The IXBX75N170 is a high-voltage IGBT module, typically packaged in a TO-264 (or similar) through-hole or module format, designed for high-power applications. Exact packaging may vary by manufacturer, so refer to the datasheet for precise details.

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