IS43DR16640B-3DBLI

The IS43DR16640B-3DBLI is a type of DRAM (Dynamic Random-Access Memory) module, specifically a DDR3 (Double Data Rate 3) SDRAM. It features a 640 Mb capacity and is designed to provide high-speed data storage and retrieval, making it suitable for use in various computing applications that demand fast and efficient memory solutions. The module operates at a standard voltage of 1.5V, which helps in balancing performance with power consumption.
Key attributes of the IS43DR16640B-3DBLI include its 8-bank architecture and fast clock speeds, which enhance its ability to handle multiple data requests simultaneously. This makes it ideal for integration into devices such as PCs, servers, and other digital electronics requiring robust memory performance. Additionally, its compact form factor and reliability make it a practical choice for designers looking to optimize space without sacrificing functionality. The module's design also supports error correction and high stability, further enhancing its appeal for critical applications that require dependable memory performance.

The IS43DR16640B-3DBLI is a 1Gb DDR2 SDRAM chip. Equivalent products include:
1. Micron MT47H64M16HR-3
2. Samsung K4T1G164QF-BCE6
3. Hynix H5TQ1G63EFR-H9
4. Nanya NT5TU64M16GG-AC
These equivalents may vary in terms of specific configurations or performance characteristics, so it's essential to verify compatibility with your application.

The IS43DR16640B-3DBLI is a 1 Gb DDR3 DRAM chip designed for high-performance computing applications. Key features include:
1. Density and Organization: 1 Gigabit, organized as 64M x 16 bits.
2. Speed: Operates at a high speed of up to 1600 MT/s (megatransfers per second), making it suitable for bandwidth-intensive applications.
3. Voltage: Operates at a standard voltage of 1.5V, balancing power consumption and performance.
4. Package: Comes in a 96-ball BGA package, which is compact and suitable for dense board designs.
5. Reliability: Supports on-die termination and dynamic on-die calibration, enhancing signal integrity and system reliability.
6. Temperature Range: Industrial temperature range, making it suitable for harsh environments.
7. Compatibility: Compliant with the JEDEC DDR3 standard, ensuring broad compatibility with various controllers and systems.
These features make the IS43DR16640B-3DBLI an ideal choice for applications requiring high speed, reliability, and efficient power management.

The IS43DR16640B-3DBLI is manufactured by ISSI, or Integrated Silicon Solution, Inc. ISSI is a technology company that specializes in designing and marketing high-performance integrated circuits. Their product portfolio includes a wide range of memory products such as DRAM, SRAM, and flash memory, along with analog and mixed-signal integrated circuits. ISSI serves various markets, including automotive, communications, industrial, and digital consumer electronics, providing essential components for a range of electronic devices and systems.

The IS43DR16640B-3DBLI is a type of DRAM (Dynamic Random Access Memory) commonly used in various applications that require quick data access and efficient memory management. Its primary application areas include computing devices such as PCs, laptops, and servers, where it supports efficient multitasking and quick data retrieval. It is also used in networking equipment, embedded systems, and consumer electronics like smart devices and digital cameras. Additionally, its high-speed data transfer capabilities make it suitable for telecommunications and automotive electronics, enhancing performance in advanced driver-assistance systems (ADAS) and infotainment systems.

The IS43DR16640B-3DBLI is a DRAM memory chip that typically comes in a 96-ball BGA (Ball Grid Array) package. This packaging is designed for compact and efficient surface mounting on circuit boards, facilitating high-density memory integration in devices.