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IS42S32160D-7BLI
+NomenclatureIC DRAM 512MBIT PARALLEL 90TFBGA
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FabricantSociété Integrated Silicon Solutions
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Pièce fabricant #IS42S32160D-7BLI
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Package TFBGA-90
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En stock2565
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Spécifications
| Attribut | Valeur |
| Package / Case | Tray |
| Part Status | Not For New Designs |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Présentation
Description
Key features include a high clock frequency, typically up to 143 MHz, which allows for rapid access times and efficient memory operations. The device supports single data rate (SDR), meaning it processes one data word per clock cycle, and features a CAS latency of 3. The IS42S32160D-7BLI is equipped with programmable burst lengths and offers auto refresh and self-refresh capabilities, enhancing its reliability and performance in various environments.
The chip is packaged in a 54-pin TSOP II (Thin Small Outline Package), which facilitates easy integration into electronic circuits. It is well-suited for use in systems that demand high density and low latency memory solutions.
Equivalent
Features
The IS42S32160D-7BLI is designed for low power consumption, making it ideal for battery-powered devices. It includes an auto-refresh and self-refresh mode to maintain data integrity. The device is packaged in a 54-pin TSOP-II, providing a compact form factor for space-constrained designs. Other features include a bank interleaving feature, a burst termination option, and an all-banks precharge command for improved efficiency. Its industrial-grade operating temperature range of -40°C to 85°C ensures reliability in harsh environments.