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IS41LV16100B-50TL
+NomenclatureIC DRAM 16MBIT PAR 44TSOP II
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FabricantSociété Integrated Silicon Solutions
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Pièce fabricant #IS41LV16100B-50TL
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Fiche technique IS41LV16100B-50TL DataSheet
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En stock3379
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Spécifications
| Attribut | Valeur |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | DRAM - EDO |
| Memory Size | 16Mbit |
| Memory Organization | 1M x 16 |
| Memory Interface | Parallel |
| Access Time | 25 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Base Product Number | IS41LV16100 |
Présentation
Description
Features include a deep 8-word burst mode, which enhances performance in applications requiring sequential data access, and a fast page mode for reduced access latency. The package dimensions are compact, often offered in a 54-pin TSOP-II format, ideal for space-constrained designs.
This SDRAM is commonly utilized in various applications such as telecommunications, consumer electronics, and industrial systems, where efficient memory performance is crucial. Its combination of speed, density, and low power consumption makes it an attractive choice for modern embedded systems and computing applications.
Equivalent
Features
1. Density: 16 megabits organized as 2M x 8 bits.
2. Voltage: Operates at low voltage, typically 2.7V to 3.6V.
3. Speed: Access time of 50 ns, suitable for various applications requiring fast data retrieval.
4. Interface: CMOS-compatible, allowing easy integration into systems.
5. Packages: Available in a 44-pin TSOP-II package for compact design.
6. Refresh: Supports both RAS-only refresh and CAS-before-RAS refresh options for maintaining data integrity.
7. Power Consumption: Low standby and active power consumption contributing to energy efficiency.
8. Applications: Ideal for portable devices, consumer electronics, and other applications requiring reliable memory solutions.
This combination of features makes the IS41LV16100B-50TL suitable for a wide range of electronic applications, providing both performance and efficiency.
Pinout
Key functions of the pins include:
1. Data I/O Pins (D0-D7): These are the 8 data input/output pins used for data transfer.
2. Address Pins (A0-A18): These pins are used to select the address for memory access, allowing for a 2 MB address space.
3. Control Pins:
- CS (Chip Select): Activates the memory chip.
- OE (Output Enable): Enables data output.
- WE (Write Enable): Activates the write operation.
4. Power Supply Pins:
- VDD: Power supply voltage.
- VSS: Ground.
5. Other Control Pins:
- Ras, Cas: Row and column address strobe signals for accessing memory.
The device is designed for low-power and high-speed operation, making it suitable for various applications in computers and electronic devices.
Manufacturer
ISSI serves a variety of markets, including automotive, consumer electronics, industrial, and telecommunications, providing memory solutions that meet the demands of high-speed applications. The company is recognized for its innovation in memory technology and focuses on delivering reliable and cost-effective products to its customers. As a key player in the semiconductor industry, ISSI plays a crucial role in supporting the growing needs of electronic devices with advanced memory solutions.
Application
1. Networking Equipment: Used in routers and switches for high-speed data storage.
2. Consumer Electronics: Found in devices like digital cameras and gaming consoles for fast data access.
3. Industrial Automation: Employed in control systems for real-time data processing.
4. Telecommunications: Utilized in base stations and repeaters for buffering and caching.
5. Embedded Systems: Integrated in microcontrollers and microprocessors for temporary data storage.
Its low power consumption and fast access speeds make it ideal for these applications.