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IRLML6401
+Nomenclature12V 4.3A [email protected],4.3A 1.3W 950
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FabricantLa société UMW
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Pièce fabricant #IRLML6401
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Fiche technique IRLML6401 DataSheet
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En stock18439
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Spécifications
| Attribut | Valeur |
| Series | UMW |
| PartStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 12 V |
| Current-ContinuousDrain(Id)@25°C | 4.3A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@Id,Vgs | 50mOhm @ 4.3A, 4.5V |
| Vgs(th)(Max)@Id | 950mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 830 pF @ 10 V |
| PowerDissipation(Max) | 1.3W (Ta) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23 |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Présentation
Description
The IRLML6401 is often utilized in DC-DC converters, load switches, and other applications requiring efficient voltage regulation and control. It operates at low gate voltages, making it compatible with logic level inputs. This characteristic is particularly beneficial in microcontroller-based circuits where the MOSFET can be directly driven by digital signals.
With its robust construction, the IRLML6401 offers good thermal performance and reliability, making it a popular choice among designers looking for a balance between performance and size. Its versatility and efficiency make it ideal for various applications in consumer electronics, telecommunications, and automotive industries.
Equivalent
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of -20V and can handle a continuous drain current (I_D) up to -3.7A.
2. R_DS(on): The on-resistance is very low, typically around 0.045 ohms at a gate-source voltage (V_GS) of -4.5V, which ensures high efficiency and low power loss.
3. Package: The device is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Thermal Characteristics: It offers good thermal performance with a junction-to-ambient thermal resistance (R_θJA) of around 83°C/W.
5. Fast Switching: It supports fast switching speeds, making it ideal for high-frequency applications.
6. Applications: Commonly used in DC-DC converters, load switches, and general-purpose switching in consumer electronics.
These features make the IRLML6401 a versatile and efficient choice for various electronic applications requiring compact and reliable MOSFET solutions.
Pinout
1. Gate (G): This pin is used to control the conductivity of the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Source (S): This pin is typically connected to the more positive potential in a P-channel MOSFET. When the gate-source voltage is sufficiently negative, the MOSFET conducts between the source and drain.
3. Drain (D): This is the output of the MOSFET and is typically connected to the load. Current flows from the source to the drain when the MOSFET is turned on.
The IRLML6401 is designed for low-voltage applications and is used in portable electronics, battery management, and power conversion systems due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulators for efficient power conversion.
2. Switching Applications: Ideal for high-speed switching in consumer electronics and computing devices.
3. Load Switching: Employed in battery-powered devices for load switching to extend battery life.
4. Motor Control: Utilized in motor control circuits for small motors in robotics and automation.
5. LED Drivers: Used in driving LED lights due to its low on-resistance, enhancing energy efficiency.
These characteristics make it suitable for compact, high-frequency, and energy-efficient electronic designs.