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IRLML2502
+Nomenclature20V 4.2A 1.25W [email protected],4.2A 1.
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FabricantLa société UMW
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Pièce fabricant #IRLML2502
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Fiche technique IRLML2502 DataSheet
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En stock4896
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Spécifications
| Attribut | Valeur |
| Series | UMW |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 4.2A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@Id,Vgs | 45mOhm @ 4.2A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 10 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 300 pF @ 10 V |
| PowerDissipation(Max) | 1.25W (Ta) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23 |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Présentation
Description
The IRLML2502 is a compact N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring a low on-resistance and fast switching. This component is typically utilized in power management circuits, load switches, and DC-DC converters. Featuring a small SOT-23 package, the IRLML2502 is suitable for space-constrained designs.
Key specifications include a low gate threshold voltage, which allows it to be driven by lower voltage logic levels, and a maximum continuous drain current of around 3.4A. The device's low RDS(on) (drain-source on-resistance) ensures minimal power loss and efficient operation, making it ideal for battery-powered devices. Additionally, its high-speed switching capability supports applications that require quick response times.
The IRLML2502's versatility, efficiency, and compact form factor make it a popular choice among engineers and designers for a variety of consumer electronics, automotive, and industrial applications. As always, consulting the datasheet for detailed electrical characteristics and adhering to proper handling procedures are essential for optimal performance and reliability.
Key specifications include a low gate threshold voltage, which allows it to be driven by lower voltage logic levels, and a maximum continuous drain current of around 3.4A. The device's low RDS(on) (drain-source on-resistance) ensures minimal power loss and efficient operation, making it ideal for battery-powered devices. Additionally, its high-speed switching capability supports applications that require quick response times.
The IRLML2502's versatility, efficiency, and compact form factor make it a popular choice among engineers and designers for a variety of consumer electronics, automotive, and industrial applications. As always, consulting the datasheet for detailed electrical characteristics and adhering to proper handling procedures are essential for optimal performance and reliability.
Equivalent
The IRLML2502 is an N-channel MOSFET commonly used in low power applications. Equivalent products include:
1. 2N7002
2. BSS138
3. NTR4003N
4. Si2302
5. DMG2302UK
These alternatives should have similar voltage and current specifications but always check the datasheet for precise matching with your requirements.
1. 2N7002
2. BSS138
3. NTR4003N
4. Si2302
5. DMG2302UK
These alternatives should have similar voltage and current specifications but always check the datasheet for precise matching with your requirements.
Features
The IRLML2502 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its compact size and efficient performance in switching applications. Here are its key features:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of approximately 3.3A.
2. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and heat generation, enhancing efficiency in applications.
3. Fast Switching Speed: Designed for fast switching, making it suitable for high-frequency applications.
4. Small Package: It usually comes in a compact SOT-23 package, making it ideal for space-constrained designs.
5. Enhanced Power Handling: Despite its small size, it offers good power handling capabilities, useful in portable devices.
6. Thermal Performance: Adequate thermal performance to support efficient operation and reliability.
These features make the IRLML2502 suitable for applications in power management, load switching, and electronic circuits requiring high efficiency and compact designs.
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 20V and can handle a continuous drain current (I_D) of approximately 3.3A.
2. Low On-Resistance: The MOSFET features a low on-resistance (R_DS(on)), which minimizes power loss and heat generation, enhancing efficiency in applications.
3. Fast Switching Speed: Designed for fast switching, making it suitable for high-frequency applications.
4. Small Package: It usually comes in a compact SOT-23 package, making it ideal for space-constrained designs.
5. Enhanced Power Handling: Despite its small size, it offers good power handling capabilities, useful in portable devices.
6. Thermal Performance: Adequate thermal performance to support efficient operation and reliability.
These features make the IRLML2502 suitable for applications in power management, load switching, and electronic circuits requiring high efficiency and compact designs.
Pinout
The IRLML2502 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits. It is typically housed in a Surface-Mount Device (SMD) package known as SOT-23. The pin count for the IRLML2502 is 3 pins.
The functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET's channel conductivity. A voltage applied to the gate terminal determines whether the device is in an "on" or "off" state.
2. Source (S): This pin is the source of the charge carriers (electrons or holes), which flow from the source to the drain when the device is on.
3. Drain (D): This pin is the drain of the charge carriers, where the current flows out of the MOSFET.
The IRLML2502 is an N-channel MOSFET, suitable for low-voltage applications and often used in switching and amplifying purposes in various electronic devices.
The functions of these pins are as follows:
1. Gate (G): This pin controls the MOSFET's channel conductivity. A voltage applied to the gate terminal determines whether the device is in an "on" or "off" state.
2. Source (S): This pin is the source of the charge carriers (electrons or holes), which flow from the source to the drain when the device is on.
3. Drain (D): This pin is the drain of the charge carriers, where the current flows out of the MOSFET.
The IRLML2502 is an N-channel MOSFET, suitable for low-voltage applications and often used in switching and amplifying purposes in various electronic devices.
Manufacturer
The IRLML2502 is manufactured by Infineon Technologies, a leading semiconductor company. Infineon is a German company known for producing a wide range of semiconductor solutions that cater to the automotive, industrial, communication, and consumer sectors. They specialize in power semiconductors, microcontrollers, security controllers, and more, contributing to advancements in energy efficiency, mobility, and security.
Application
The IRLML2502 is a small-signal MOSFET used in various applications due to its compact size and efficient performance. Key application areas include:
1. Switching Circuits: Utilized in DC-DC converters and power management systems for efficient switching and minimal power loss.
2. Load Switching: Effective in controlling motors, solenoids, and LEDs by managing high-current loads with low voltage control.
3. Signal Amplification: Used in amplifiers for boosting weak signals without significant distortion.
4. Battery-Powered Devices: Ideal for portable electronics due to its low on-resistance and fast switching capabilities, which extend battery life.
5. Consumer Electronics: Common in devices like smartphones and tablets for efficient power regulation and management.
1. Switching Circuits: Utilized in DC-DC converters and power management systems for efficient switching and minimal power loss.
2. Load Switching: Effective in controlling motors, solenoids, and LEDs by managing high-current loads with low voltage control.
3. Signal Amplification: Used in amplifiers for boosting weak signals without significant distortion.
4. Battery-Powered Devices: Ideal for portable electronics due to its low on-resistance and fast switching capabilities, which extend battery life.
5. Consumer Electronics: Common in devices like smartphones and tablets for efficient power regulation and management.
Package
The IRLML2502 is a MOSFET (metal-oxide-semiconductor field-effect transistor) packaged in a SOT-23 format. This is a small, surface-mount package commonly used in electronic circuits for its compact size, making it suitable for applications with space constraints.
