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IRLD110PBF
+NomenclatureMOSFET N-CH 100V 1A 4DIP
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FabricantSiliconix
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Pièce fabricant #IRLD110PBF
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En stock5748
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Part Status | Obsolete |
| Base Product Number | IRLD110 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Packaging | Tube |
