Images à titre indicatif uniquement
IRGP20B60PDPBF
+NomenclatureIGBT 600V 40A 220W TO247AC
-
FabricantTechnologie Infineon
-
Pièce fabricant #IRGP20B60PDPBF
-
Fiche technique IRGP20B60PDPBF DataSheet
-
Package TO-247-3
-
En stock8019
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package | Tube |
| ProductStatus | Obsolete |
| IGBTType | NPT |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 40 A |
| Current-CollectorPulsed(Icm) | 80 A |
| Vce(on)(Max)@VgeIc | 2.8V @ 15V, 20A |
| Power-Max | 220 W |
| SwitchingEnergy | 95µJ (on), 100µJ (off) |
| InputType | Standard |
| GateCharge | 68 nC |
| Td(on/off)@25°C | 20ns/115ns |
| TestCondition | 390V, 13A, 10Ohm, 15V |
| ReverseRecoveryTime(trr) | 42 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Présentation
Description
The IRGP20B60PDPBF is a silicon-based Insulated Gate Bipolar Transistor (IGBT) designed for efficient energy handling in high-power applications. It is produced by Infineon Technologies, a prominent semiconductor company. This particular IGBT is part of their IRGP series and is used primarily in applications such as motor drives, inverters, and power conversion systems.
Key features of the IRGP20B60PDPBF include a collector-emitter voltage rating of 600V and a current rating of 40A. It is designed to offer low conduction and switching losses, making it suitable for applications that require high efficiency and fast switching capabilities. Additionally, the IGBT includes a built-in diode for freewheeling purposes, enhancing its capability in AC applications.
The IRGP20B60PDPBF comes in a TO-247AC package, which provides good thermal performance due to its larger size and robust design, ensuring reliable operation even under demanding conditions. This makes it a versatile and widely used component in power electronics.
Key features of the IRGP20B60PDPBF include a collector-emitter voltage rating of 600V and a current rating of 40A. It is designed to offer low conduction and switching losses, making it suitable for applications that require high efficiency and fast switching capabilities. Additionally, the IGBT includes a built-in diode for freewheeling purposes, enhancing its capability in AC applications.
The IRGP20B60PDPBF comes in a TO-247AC package, which provides good thermal performance due to its larger size and robust design, ensuring reliable operation even under demanding conditions. This makes it a versatile and widely used component in power electronics.
Equivalent
The IRGP20B60PDPBF is an IGBT (Insulated Gate Bipolar Transistor) used for high-speed switching applications. Equivalent products include:
1. STMicroelectronics STGP20H60DF
2. Infineon IKW20N60H3
3. ON Semiconductor FGH20N60SFD
4. Toshiba GT40WR21
5. Fuji Electric 6MBP20RS-060
When selecting equivalents, ensure they match the voltage, current ratings, and package type for compatibility with your application.
1. STMicroelectronics STGP20H60DF
2. Infineon IKW20N60H3
3. ON Semiconductor FGH20N60SFD
4. Toshiba GT40WR21
5. Fuji Electric 6MBP20RS-060
When selecting equivalents, ensure they match the voltage, current ratings, and package type for compatibility with your application.
Features
The IRGP20B60PDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Key features include:
1. Voltage and Current Ratings: It supports a collector-emitter voltage (V_CE) of 600V and a continuous collector current (I_C) of 34A at 100°C.
2. Low Saturation Voltage: It offers a low V_CE(sat), which minimizes conduction losses.
3. High-Speed Switching: The device is engineered for fast switching performance, contributing to improved efficiency in power conversion applications.
4. Rugged Design: The IGBT is robust, with a tight parameter distribution and high surge current capability, ensuring reliable operation under demanding conditions.
5. Soft Switching: It features a soft switching capability that reduces electromagnetic interference (EMI) and enhances performance in inverter applications.
6. Thermal Efficiency: The IGBT is designed to ensure effective thermal management and lower heat dissipation.
7. Package: It typically comes in a TO-247 package, allowing for easy mounting and integration into circuit designs.
Overall, the IRGP20B60PDPBF is suitable for various applications, including motor drives, inverters, and power supplies, where high efficiency and reliability are crucial.
1. Voltage and Current Ratings: It supports a collector-emitter voltage (V_CE) of 600V and a continuous collector current (I_C) of 34A at 100°C.
2. Low Saturation Voltage: It offers a low V_CE(sat), which minimizes conduction losses.
3. High-Speed Switching: The device is engineered for fast switching performance, contributing to improved efficiency in power conversion applications.
4. Rugged Design: The IGBT is robust, with a tight parameter distribution and high surge current capability, ensuring reliable operation under demanding conditions.
5. Soft Switching: It features a soft switching capability that reduces electromagnetic interference (EMI) and enhances performance in inverter applications.
6. Thermal Efficiency: The IGBT is designed to ensure effective thermal management and lower heat dissipation.
7. Package: It typically comes in a TO-247 package, allowing for easy mounting and integration into circuit designs.
Overall, the IRGP20B60PDPBF is suitable for various applications, including motor drives, inverters, and power supplies, where high efficiency and reliability are crucial.
Pinout
The IRGP20B60PDPBF is an Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is designed for high-speed switching applications. The package type for this IGBT is TO-247AC, which typically has three pins.
The pin configuration and functions are as follows:
1. Pin 1 - Gate (G): This is the control terminal. A voltage applied to the gate controls the flow of current between the collector and emitter.
2. Pin 2 - Collector (C): This is the main terminal through which current enters the IGBT. It is connected to the positive voltage in the circuit.
3. Pin 3 - Emitter (E): This is the terminal through which current exits the IGBT. It is typically connected to the ground or negative voltage in the circuit.
These pins work together to enable the IGBT to function as an efficient and fast switch for electrical power applications.
The pin configuration and functions are as follows:
1. Pin 1 - Gate (G): This is the control terminal. A voltage applied to the gate controls the flow of current between the collector and emitter.
2. Pin 2 - Collector (C): This is the main terminal through which current enters the IGBT. It is connected to the positive voltage in the circuit.
3. Pin 3 - Emitter (E): This is the terminal through which current exits the IGBT. It is typically connected to the ground or negative voltage in the circuit.
These pins work together to enable the IGBT to function as an efficient and fast switch for electrical power applications.
Manufacturer
The IRGP20B60PDPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in various semiconductor solutions. These include microcontrollers, power semiconductors, and sensors, which are used in a wide range of applications such as automotive, industrial power control, and chip card and security systems. The company is known for its focus on innovation and sustainability, providing solutions that aim to improve energy efficiency and contribute to the advancement of technology in fields like renewable energy, automotive electronics, and communications infrastructure.
Application
The IRGP20B60PDPBF is an insulated-gate bipolar transistor (IGBT) used primarily in power electronics applications. Its main application areas include:
1. Motor Drives: Utilized in industrial motor drives for efficient control of electric motors.
2. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) to convert DC to AC power.
3. Switch-Mode Power Supplies (SMPS): Enhances efficiency and performance in high-frequency SMPS applications.
4. Welding Equipment: Provides the robustness needed for managing high-power welding processes.
5. Induction Heating: Employed in induction heating systems for applications requiring precise control and high power.
These areas benefit from the IGBT’s efficiency, fast switching capabilities, and thermal performance.
1. Motor Drives: Utilized in industrial motor drives for efficient control of electric motors.
2. Inverters: Used in solar inverters and uninterruptible power supplies (UPS) to convert DC to AC power.
3. Switch-Mode Power Supplies (SMPS): Enhances efficiency and performance in high-frequency SMPS applications.
4. Welding Equipment: Provides the robustness needed for managing high-power welding processes.
5. Induction Heating: Employed in induction heating systems for applications requiring precise control and high power.
These areas benefit from the IGBT’s efficiency, fast switching capabilities, and thermal performance.
Package
The IRGP20B60PDPBF is an IGBT (Insulated Gate Bipolar Transistor) and is housed in a TO-247 package.
