Images à titre indicatif uniquement
IRFU3607PBF
+NomenclatureMOSFET N-CH 75V 56A IPAK
-
FabricantTechnologie Infineon
-
Pièce fabricant #IRFU3607PBF
-
Fiche technique IRFU3607PBF DataSheet
-
En stock23129
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC,Infineon Technologies |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain(Id) @ 25°C | 56A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9mOhm @ 46A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 84 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3070 pF @ 50 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
Présentation
Description
The IRFU3607PBF is a type of power MOSFET transistor developed by International Rectifier, now part of Infineon Technologies. This component is designed for use in electronic applications requiring efficient power management and high-speed switching capabilities. Key features of the IRFU3607PBF include a low on-state resistance, which enhances its efficiency by reducing power loss during operation. It also supports a high current carrying capacity and can handle significant power loads, making it suitable for a wide range of applications, including automotive and industrial systems.
The transistor is typically used in DC-DC converters, motor control circuits, and power management applications where efficient switching is crucial. It comes with a TO-251 package, which offers good thermal performance and reliability. Additionally, the IRFU3607PBF is lead-free and RoHS compliant, aligning with environmental standards for reduced hazardous substances. Its design allows for enhanced durability and reliability in demanding electronic environments, making it a popular choice for engineers and designers in power electronics.
The transistor is typically used in DC-DC converters, motor control circuits, and power management applications where efficient switching is crucial. It comes with a TO-251 package, which offers good thermal performance and reliability. Additionally, the IRFU3607PBF is lead-free and RoHS compliant, aligning with environmental standards for reduced hazardous substances. Its design allows for enhanced durability and reliability in demanding electronic environments, making it a popular choice for engineers and designers in power electronics.
Equivalent
The IRFU3607PBF is a power MOSFET manufactured by Infineon Technologies. Equivalent products can be identified by matching key specifications like voltage, current rating, and package type. Some potential equivalents include:
1. NTTFS5C604NL by ON Semiconductor
2. FDS6679AZ by ON Semiconductor
3. FDP7030BL by ON Semiconductor
4. AOT290L by Alpha & Omega Semiconductor
Ensure compatibility with your specific application by checking detailed datasheets and electrical characteristics.
1. NTTFS5C604NL by ON Semiconductor
2. FDS6679AZ by ON Semiconductor
3. FDP7030BL by ON Semiconductor
4. AOT290L by Alpha & Omega Semiconductor
Ensure compatibility with your specific application by checking detailed datasheets and electrical characteristics.
Features
The IRFU3607PBF is a power MOSFET from Infineon Technologies, designed for use in a variety of applications due to its robust features and characteristics. Key features include:
1. N-Channel MOSFET: It is an N-channel device, which typically offers better performance in terms of speed and conduction losses compared to P-channel MOSFETs.
2. VDSS: The device has a drain-source breakdown voltage (VDSS) of 75V, making it suitable for medium voltage applications.
3. RDS(on): It has a low on-state resistance (RDS(on)) of around 8 mΩ, which helps in reducing conduction losses and enhancing efficiency.
4. ID: The continuous drain current (ID) rating is approximately 80A, allowing it to handle substantial power levels.
5. Package: It comes in a TO-220 package, which is widely used for its good thermal performance and ease of mounting.
6. Applications: Ideal for applications such as power management, motor drives, and DC-DC converters.
Overall, the IRFU3607PBF is valued for its efficiency, reliability, and suitability for various power applications.
1. N-Channel MOSFET: It is an N-channel device, which typically offers better performance in terms of speed and conduction losses compared to P-channel MOSFETs.
2. VDSS: The device has a drain-source breakdown voltage (VDSS) of 75V, making it suitable for medium voltage applications.
3. RDS(on): It has a low on-state resistance (RDS(on)) of around 8 mΩ, which helps in reducing conduction losses and enhancing efficiency.
4. ID: The continuous drain current (ID) rating is approximately 80A, allowing it to handle substantial power levels.
5. Package: It comes in a TO-220 package, which is widely used for its good thermal performance and ease of mounting.
6. Applications: Ideal for applications such as power management, motor drives, and DC-DC converters.
Overall, the IRFU3607PBF is valued for its efficiency, reliability, and suitability for various power applications.
Pinout
The IRFU3607PBF is a MOSFET transistor, specifically an N-channel MOSFET, manufactured by Infineon Technologies. It comes in a TO-251 (IPAK) package, which features three pins. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. Applying a voltage to the gate determines whether the MOSFET is in the "on" or "off" state, thus allowing or preventing current flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET. In an N-channel MOSFET, the drain is connected to the load, and current flows from drain to source when the device is on.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. For an N-channel MOSFET, the source is usually connected to the ground or a lower voltage level compared to the drain.
These pins facilitate the MOSFET's primary function of switching and amplifying electronic signals in various applications.
1. Gate (G): This pin is used to control the MOSFET's operation. Applying a voltage to the gate determines whether the MOSFET is in the "on" or "off" state, thus allowing or preventing current flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET. In an N-channel MOSFET, the drain is connected to the load, and current flows from drain to source when the device is on.
3. Source (S): This pin is the terminal through which the current enters the MOSFET. For an N-channel MOSFET, the source is usually connected to the ground or a lower voltage level compared to the drain.
These pins facilitate the MOSFET's primary function of switching and amplifying electronic signals in various applications.
Manufacturer
The IRFU3607PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs and manufactures a wide range of semiconductor solutions. These solutions include microcontrollers, sensors, power management ICs, power semiconductors, and embedded security products, among others. Infineon's products are used in various applications across automotive, industrial, consumer electronics, and communication sectors. Known for its focus on energy efficiency, mobility, and security, Infineon is one of the leading semiconductor companies globally.
Application
The IRFU3607PBF is a power MOSFET primarily used in applications requiring efficient power management and high-speed switching. Its common application areas include:
1. Power Supplies: Used in DC-DC converters and AC-DC power supplies for improved energy efficiency.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics due to its high current capabilities.
3. Lighting: Employed in LED drivers and ballast circuits for lighting systems.
4. Telecommunications: Utilized in power management for communication devices and systems.
5. Automotive: Used in automotive electronics for applications such as electric power steering and battery management systems.
Its robust design and reliability make it suitable for various other industrial and consumer applications.
1. Power Supplies: Used in DC-DC converters and AC-DC power supplies for improved energy efficiency.
2. Motor Drives: Suitable for driving motors in industrial and consumer electronics due to its high current capabilities.
3. Lighting: Employed in LED drivers and ballast circuits for lighting systems.
4. Telecommunications: Utilized in power management for communication devices and systems.
5. Automotive: Used in automotive electronics for applications such as electric power steering and battery management systems.
Its robust design and reliability make it suitable for various other industrial and consumer applications.
Package
The IRFU3607PBF is a MOSFET transistor that comes in an I-Pak (TO-251) package. This package type is leaded and offers a compact form factor suitable for through-hole mounting, providing efficient thermal performance and electrical conductivity.
