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IRFU120NPBF
+NomenclatureMOSFET N-CH 100V 9.4A IPAK
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FabricantTechnologie Infineon
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Pièce fabricant #IRFU120NPBF
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Fiche technique IRFU120NPBF DataSheet
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En stock7671
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251AA) |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Base Product Number | IRFU120 |
Présentation
Description
Key characteristics include fast switching speeds, low gate charge, and excellent thermal stability, which ensure reliable performance in demanding environments. The IRFU120NPBF is often used in applications such as DC-DC converters, motor drives, and power inverters. The device typically comes in a TO-220 package, allowing for easy heat dissipation and integration into various designs.
Overall, the IRFU120NPBF is an essential component for engineers seeking efficient and robust solutions in their power electronics projects.
Equivalent
1. STP16NF06
2. FQP16N06
3. BSS123
4. IRF620
5. MTP20N06
Ensure to check specifications like voltage, current ratings, and Rds(on) for exact compatibility in your application.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, suitable for high-voltage applications.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 40A, allowing for substantial power delivery.
3. R_DS(on): Low on-resistance (R_DS(on)) of around 0.080 Ohm at V_GS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) between 2V to 4V, enabling efficient switching.
5. Package: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: Ideal for high-speed applications, providing better efficiency in switching power supplies and motor controllers.
These characteristics make the IRFU120NPBF suitable for applications in automotive, industrial, and consumer electronics where reliability and efficiency are critical.
Pinout
1. Gate (G) - This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This is the terminal where the main current enters the MOSFET when it is in the "on" state.
3. Source (S) - This is the terminal through which current exits the MOSFET when it is in the "on" state.
The IRFU120NPBF is designed for power switching applications, with a maximum drain-source voltage of 55V and a continuous drain current of up to 120A, making it suitable for various high-power applications.