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IRFS38N20DTRLP
+NomenclatureMOSFET N-CH 200V 43A D2PAK
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FabricantTechnologie Infineon
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Pièce fabricant #IRFS38N20DTRLP
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Fiche technique IRFS38N20DTRLP DataSheet
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En stock21017
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 43A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 54mOhm @ 26A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2900 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Présentation
Description
1. Specifications: This MOSFET typically features a high voltage rating, high-speed switching capabilities, and low on-state resistance, making it efficient for power applications.
2. Applications: It is commonly utilized in power supplies, motor drives, and other systems requiring efficient power management and control. Its high-speed switching makes it suitable for use in high-frequency circuits.
3. Construction: The device is built using advanced semiconductor technology to ensure robustness and reliability under varying operating conditions.
4. Features: It may include features like avalanche energy rating, low gate charge, and thermal resistance, enhancing its performance in high-stress environments.
5. Package: The IRFS38N20DTRLP is typically available in a TO-220 or similar package, which provides ease of mounting and adequate heat dissipation.
Understanding the datasheet and specifications of the IRFS38N20DTRLP is crucial for selecting the appropriate MOSFET for specific applications to ensure optimal performance and reliability.
Equivalent
Features
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 200V.
2. Current Rating: It supports a continuous drain current (I_D) of approximately 38A.
3. R_DS(on): It has a low on-resistance, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it suitable for high-frequency applications.
5. Package: Typically available in a TO-220 package, which offers effective heat dissipation.
6. Temperature Range: Operates efficiently over a wide temperature range, enhancing its reliability in various environments.
7. Gate Charge: Features a relatively low gate charge, which minimizes power consumption and allows for rapid switching.
These characteristics make the IRFS38N20DTRLP suitable for applications in power supply circuits, motor controls, and other high-power electronic systems.
Pinout
1. Gate (G): This pin is responsible for controlling the flow of current between the source and the drain. A voltage applied here enables or disables the transistor.
2. Drain (D): The drain is the terminal through which the main current flows out of the transistor when it is in the 'on' state.
3. Source (S): This terminal is the return path for the current flowing through the drain.
The IRFS38N20DTRLP MOSFET is used in applications requiring efficient power switching, such as in power supply circuits, motor controls, and other power management systems. It is known for its high current capacity and low on-resistance, making it suitable for high-efficiency power applications.
Manufacturer
Application
1. Power Supplies: Utilized in switched-mode power supplies (SMPS) for improving energy efficiency.
2. Motor Drives: Used in controlling DC motors and actuators, benefiting from low on-resistance and high current handling.
3. Renewable Energy Systems: Employed in solar inverters and wind turbine controllers for efficient energy conversion.
4. Automotive Systems: Integrated into electric vehicle powertrains and battery management systems for enhanced performance.
5. Industrial Equipment: Applicable in industrial automation and robotics for precise control and power management.
These applications leverage the MOSFET's robustness, thermal performance, and reliability.