IRFR5505TRPBF

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IRFR5505TRPBF

+Nomenclature

MOSFET P-CH 55V 18A DPAK

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 110mOhm @ 9.6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 650 pF @ 25 V
PowerDissipation(Max) 57W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Présentation

Description

The IRFR5505TRPBF is a N-channel MOSFET from Infineon Technologies, designed for power management applications. Key features include:
- Voltage Rating: 55V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 0.06Ω (max at VGS=10V)
- Fast Switching: Suitable for DC-DC converters, motor control, and load switching
- Package: DPAK (TO-252), surface-mountable
It operates with a gate threshold voltage (VGS(th)) of 2-4V, making it compatible with logic-level and standard drive circuits. The device is lead-free and RoHS compliant, ensuring environmental safety.
Common applications include:
- Power supplies
- Battery management
- Automotive systems
Its efficiency and thermal performance make it ideal for high-current, low-loss switching. Always refer to the datasheet for detailed specifications.

Equivalent

Equivalent products to the IRFR5505TRPBF (P-channel MOSFET, 55V, 31A, 0.06Ω) include:
- IRFR5505PBF (same specs, different packaging)
- IRFR5505TR (similar, tape/reel packaging)
- IRF4905PBF (55V, 74A, 0.02Ω, higher current)
- STP55P06F7 (60V, 55A, 0.06Ω, STMicro)
- FQP47P06 (60V, 47A, 0.07Ω, Fairchild)
Check datasheets for exact compatibility.

Features

The IRFR5505TRPBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 27A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max @ VGS = 10V)
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Low Gate Charge (Qg): 28nC (typ) for efficient switching
- Avalanche Energy Rated: Improved ruggedness
- Package: TO-252 (DPAK) – Surface-mount, compact design
- Applications: Power management, DC-DC converters, motor control
This MOSFET is designed for high efficiency and reliability in power electronics.

Pinout

The IRFR5505TRPBF is a Power MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- N-channel MOSFET
- VDSS: 55V
- ID: 31A (continuous)
- RDS(on): 0.06Ω (max at VGS = 10V)
- Logic-level compatible (VGS(th) ~2-4V)
Applications: Power switching, motor control, DC-DC converters.

Application

The IRFR5505TRPBF, an N-channel MOSFET, is commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Motor Control – H-bridge circuits, PWM drivers.
3. Switching Circuits – Load switches, relay replacements.
4. LED Drivers – Efficient current control.
5. Battery Protection – Discharge control in portable devices.
Its low on-resistance (RDS(on)) and high current handling (up to 31A) make it suitable for high-efficiency, low-voltage applications.

Package

The IRFR5505TRPBF is a Power MOSFET housed in a TO-252 (DPAK) surface-mount package. This package type is compact, suitable for high-power applications, and features a thermally efficient design with an exposed pad for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-current circuits.

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