IRFP3077PBF

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IRFP3077PBF

+Nomenclature

MOSFET N-CH 75V 120A TO247AC

  • FabricantTechnologie Infineon

  • Pièce fabricant #IRFP3077PBF

  • En stock5567

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Spécifications

Attribut Valeur
Series HEXFET®
PartStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 10V
RdsOn(Max)@Id,Vgs 3.3mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 9400 pF @ 50 V
PowerDissipation(Max) 340W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC
Package/Case TO-247-3
BaseProductNumber IRFP3077

Présentation

Description

The IRFP3077PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a maximum drain-source voltage (VDS) of 75V and a continuous drain current (ID) rating of 120A, making it suitable for use in power management and switching applications. With a low on-state resistance (RDS(on)) of around 8.5 mΩ, it ensures efficient operation with minimal power loss.
The device is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial in high-current applications. The IRFP3077PBF is often used in DC-DC converters, inverters, and motor control circuits due to its fast switching speed and high efficiency.
Its PBF designation indicates that it is lead-free, compliant with RoHS standards, making it an environmentally friendly option. Overall, the IRFP3077PBF is popular among engineers and designers for its reliability and performance in demanding electronic circuits.

Equivalent

The IRFP3077PBF is a N-channel MOSFET. Equivalent products include:
1. IRF3205 - Similar specs, higher current ratings.
2. STP75NF75 - Slightly lower voltage tolerance.
3. FQP50N60 - Good alternative for high voltage applications.
4. AOD5N60 - Comparable performance with a lower gate threshold.
Always check the datasheet for specific parameters to ensure compatibility.

Features

The IRFP3077PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 120A at a case temperature of 25°C, allowing it to support high loads.
3. Low RDS(on): With a low on-resistance of approximately 0.028 ohms at a gate-source voltage (VGS) of 10V, it minimizes conduction losses.
4. Fast Switching: The MOSFET has a fast switching capability, which enhances efficiency in applications like power supplies and motor drives.
5. Thermal Performance: It features a high maximum junction temperature (Tj) of 175°C, allowing for robust thermal management.
6. Package: Available in an TO-220 package, it facilitates easy mounting and heat dissipation.
These features make the IRFP3077PBF suitable for applications in power electronics, automotive systems, and industrial automation.

Pinout

The IRFP3077PBF is a power MOSFET with a total of 7 pins. Here are the pin assignments and their functions:
1. Gate (G) - This pin controls the MOSFET's switching; applying a voltage here turns the device on.
2. Drain (D) - This is the output pin where the load is connected. The current flows from drain to source when the device is on.
3. Source (S) - This pin connects to the ground or the negative side of the power supply; it is the input for current flow when the device is activated.
4. Gate (G) - Duplicate pin for enhanced current capacity, providing effective gate drive.
5. Drain (D) - Duplicate pin for enhanced current handling and thermal management.
6. Source (S) - Duplicate pin for improved electrical connection and reliability.
7. Tab - This is an exposed metal tab that can be used for heat dissipation and is typically connected to the source.
The IRFP3077PBF is commonly used in applications such as power supplies and motor controls due to its high efficiency and thermal performance.

Manufacturer

The IRFP3077PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer. Founded in 1999, Infineon is headquartered in Neubiberg, Germany, and specializes in providing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and security solutions. The company focuses on innovation and sustainability, serving various sectors such as automotive, industrial, communication, and consumer electronics. Infineon is known for its high-performance products, including MOSFETs, IGBTs, and microcontrollers, contributing significantly to advancements in energy efficiency and automation technologies.

Application

The IRFP3077PBF is an N-channel MOSFET primarily used in high-power applications, including:
1. Switching Power Supplies: Efficiently managing voltage and current in power conversion.
2. Motor Control: Driving electric motors in various industrial and automotive applications.
3. Inverters: Converting DC to AC power for renewable energy systems, like solar inverters.
4. Audio Amplifiers: Enhancing output stages in high-fidelity audio systems.
5. DC-DC Converters: Ensuring efficient power regulation in various electronic devices.
Its high voltage and current ratings make it suitable for demanding environments.

Package

The IRFP3077PBF is packaged in a TO-220 format, which is a through-hole package commonly used for power transistors and MOSFETs. This package provides good thermal performance and is suitable for high-power applications.