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IRFM120ATF
+NomenclaturePOWER FIELD-EFFECT TRANSISTOR, 2
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FabricantFairchild Semiconductor Inc
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Pièce fabricant #IRFM120ATF
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Fiche technique IRFM120ATF DataSheet
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En stock28671
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 2.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 200mOhm @ 1.15A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 480 pF @ 25 V |
| PowerDissipation(Max) | 2.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-4 |
Présentation
Description
The IRFM120ATF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is part of the International Rectifier (now part of Infineon Technologies) family of power MOSFETs. The device is notable for its low on-resistance, fast switching speed, and high efficiency, making it suitable for power management, motor control, and other high-performance applications.
Key features of the IRFM120ATF include:
- Voltage Rating: It typically handles high voltages, often in the range of 100V to 200V.
- Current Handling: Capable of handling significant continuous current, enhancing its utility in various power applications.
- Thermal Performance: Designed for improved thermal dissipation, which helps in maintaining stability under high-load conditions.
- Package Type: Often comes in a TO-220 or similar package, which facilitates easy mounting and heat dissipation.
The IRFM120ATF is used in a wide range of applications, including power supplies, DC-DC converters, and amplifiers, due to its robust performance and reliable operation.
Key features of the IRFM120ATF include:
- Voltage Rating: It typically handles high voltages, often in the range of 100V to 200V.
- Current Handling: Capable of handling significant continuous current, enhancing its utility in various power applications.
- Thermal Performance: Designed for improved thermal dissipation, which helps in maintaining stability under high-load conditions.
- Package Type: Often comes in a TO-220 or similar package, which facilitates easy mounting and heat dissipation.
The IRFM120ATF is used in a wide range of applications, including power supplies, DC-DC converters, and amplifiers, due to its robust performance and reliable operation.
Equivalent
The IRFM120ATF is a power MOSFET. Equivalent products include:
1. IRFP240
2. NTE2396
3. STP11N60M2
4. FQP13N50C
5. FDPF16N50T
These alternatives offer similar specifications in terms of voltage, current capacity, and package type, though slight differences in performance might exist. Always verify compatibility with your specific application before substituting components.
1. IRFP240
2. NTE2396
3. STP11N60M2
4. FQP13N50C
5. FDPF16N50T
These alternatives offer similar specifications in terms of voltage, current capacity, and package type, though slight differences in performance might exist. Always verify compatibility with your specific application before substituting components.
Features
The IRFM120ATF is a N-channel MOSFET known for its efficient performance and reliability in various applications. Key features include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 30A, making it suitable for medium-power applications.
2. Low On-State Resistance: Featuring a low R_DS(on) of approximately 0.055 ohms, it ensures minimal power loss and high efficiency during operation.
3. Fast Switching Speed: The MOSFET is designed for fast switching, which is beneficial in applications requiring high-frequency operation, such as switching power supplies and motor controllers.
4. Thermal Performance: Encased in a TO-220 package, it offers good thermal dissipation, important for maintaining performance under continuous operation.
5. Rugged Construction: It provides reliable operation with a high avalanche energy capability, protecting the device from voltage spikes.
6. Enhanced Safe Operating Area: Ensures robust performance even under high-stress conditions.
These features make the IRFM120ATF suitable for applications like DC-DC converters, power management systems, and automotive electronics.
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 30A, making it suitable for medium-power applications.
2. Low On-State Resistance: Featuring a low R_DS(on) of approximately 0.055 ohms, it ensures minimal power loss and high efficiency during operation.
3. Fast Switching Speed: The MOSFET is designed for fast switching, which is beneficial in applications requiring high-frequency operation, such as switching power supplies and motor controllers.
4. Thermal Performance: Encased in a TO-220 package, it offers good thermal dissipation, important for maintaining performance under continuous operation.
5. Rugged Construction: It provides reliable operation with a high avalanche energy capability, protecting the device from voltage spikes.
6. Enhanced Safe Operating Area: Ensures robust performance even under high-stress conditions.
These features make the IRFM120ATF suitable for applications like DC-DC converters, power management systems, and automotive electronics.
Pinout
The IRFM120ATF is a power MOSFET typically used for switching applications. It is part of the International Rectifier HEXFET family. This component usually comes in a TO-220 package, which has three pins:
1. Gate (G): This pin is used to trigger the MOSFET into the conducting state. A voltage applied to the gate controls the flow of current between the drain and the source.
2. Drain (D): The drain is the terminal through which the main current flows. It is connected to the high-side of the load.
3. Source (S): The source terminal is connected to the ground or low-side of the load. It is the return path for the current flowing through the drain.
These three pins (Gate, Drain, and Source) are integral to the MOSFET's operation, allowing it to function as an efficient electronic switch. The IRFM120ATF is commonly used in applications requiring high-speed switching and high efficiency.
1. Gate (G): This pin is used to trigger the MOSFET into the conducting state. A voltage applied to the gate controls the flow of current between the drain and the source.
2. Drain (D): The drain is the terminal through which the main current flows. It is connected to the high-side of the load.
3. Source (S): The source terminal is connected to the ground or low-side of the load. It is the return path for the current flowing through the drain.
These three pins (Gate, Drain, and Source) are integral to the MOSFET's operation, allowing it to function as an efficient electronic switch. The IRFM120ATF is commonly used in applications requiring high-speed switching and high efficiency.
Manufacturer
The IRFM120ATF is manufactured by International Rectifier, which is a company specializing in power management technology. International Rectifier was a prominent designer and producer of power semiconductors and integrated circuits, particularly known for its expertise in MOSFETs, IGBTs, and other power management components. The company's products were widely used in various applications, including automotive, industrial, consumer electronics, and computing.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading global semiconductor manufacturer based in Germany. Infineon Technologies specializes in a wide range of semiconductor solutions, focusing on automotive, industrial power control, power management, and digital security markets. With this acquisition, Infineon expanded its portfolio and enhanced its capabilities in power management technology. Therefore, while the IRFM120ATF might originally be associated with International Rectifier, it is now under the umbrella of Infineon Technologies.
In 2015, International Rectifier was acquired by Infineon Technologies, a leading global semiconductor manufacturer based in Germany. Infineon Technologies specializes in a wide range of semiconductor solutions, focusing on automotive, industrial power control, power management, and digital security markets. With this acquisition, Infineon expanded its portfolio and enhanced its capabilities in power management technology. Therefore, while the IRFM120ATF might originally be associated with International Rectifier, it is now under the umbrella of Infineon Technologies.
Application
The IRFM120ATF is a power MOSFET designed for high-speed switching applications. Its applications include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Drives: Ideal for controlling motors in various industrial and consumer applications.
3. Inverters: Utilized in DC-AC inverters for renewable energy systems like solar and wind.
4. Lighting: Employed in high-efficiency lighting systems, including LED drivers.
5. Telecommunications: Facilitates power regulation and management in telecom equipment.
6. Automotive: Supports electronic control systems requiring efficient power handling.
Its high-speed and robust performance make it suitable for both industrial and consumer electronics.
1. Power Supplies: Used in switched-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Drives: Ideal for controlling motors in various industrial and consumer applications.
3. Inverters: Utilized in DC-AC inverters for renewable energy systems like solar and wind.
4. Lighting: Employed in high-efficiency lighting systems, including LED drivers.
5. Telecommunications: Facilitates power regulation and management in telecom equipment.
6. Automotive: Supports electronic control systems requiring efficient power handling.
Its high-speed and robust performance make it suitable for both industrial and consumer electronics.
Package
The IRFM120ATF is a MOSFET transistor that typically comes in a TO-220 package type. The TO-220 package is known for its ability to handle high power and is commonly used in power semiconductor devices.
