IRFH7085TRPBF

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IRFH7085TRPBF

+Nomenclature

MOSFET N-CH 60V 100A PQFN

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series StrongIRFET™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 3.2mOhm @ 75A, 10V
Vgs(th)(Max)@Id 3.7V @ 150µA
GateCharge(Qg)(Max)@Vgs 165 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6460 pF @ 25 V
PowerDissipation(Max) 156W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PQFN (5x6)

Présentation

Description

The IRFH7085TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for high-efficiency power management applications. This component is part of the HEXFET® series, known for its low on-resistance and fast switching capabilities, which are ideal for reducing power loss in energy-conscious applications.
Key specifications of the IRFH7085TRPBF include:
- N-channel MOSFET
- Maximum drain-source voltage (V_DS) of 30V
- Continuous drain current (I_D) of 100A
- On-resistance (R_DS(on)) as low as 1.5mΩ
- Gate charge (Q_g) of 54 nC at 10V gate-source voltage
The device comes in a PowerPAK SO-8 package, providing a compact form factor suitable for high-density circuit designs. It is used in applications such as DC-DC converters, synchronous rectification, and power management systems in computing, telecommunications, and consumer electronics. Its robust performance supports efficient thermal management, contributing to overall system reliability and efficiency.

Equivalent

Equivalent products to the IRFH7085TRPBF chip, which is an N-channel MOSFET, include:
1. NXP PSMN1R2-25YLD - Similar voltage and current ratings.
2. Infineon BSC100N06NS3G - Comparable specifications in a PowerPAK package.
3. ON Semiconductor NVMFS5C606N - Matching characteristics for power applications.
4. Vishay SiR876ADP - Close equivalent with similar Rds(on) and package type.
It's important to verify the electrical characteristics and package to ensure compatibility for your specific application.

Features

The IRFH7085TRPBF is a power MOSFET designed for efficient power management applications. Key features include:
1. Voltage and Current Ratings: It typically features a drain-to-source voltage (V_DS) rating of 30V and a continuous drain current (I_D) of up to 100A, enabling high power handling capability.
2. R_DS(on): It has a low on-resistance (R_DS(on)) typically around 1.5 milliohms, which helps reduce power loss and improves efficiency.
3. Package Type: The device is available in a compact and thermally efficient PQFN package, which supports high-density designs.
4. Thermal Performance: It offers excellent thermal performance due to its package design, which aids in heat dissipation and enhances reliability.
5. Applications: Suitable for use in synchronous rectification, DC-DC converters, motor drives, and other power management applications.
6. Other Characteristics: It features fast switching speeds and a high-speed body diode, which contribute to improved performance in a variety of applications.
This MOSFET is designed to meet the demands of high-efficiency power conversion systems, making it ideal for compact and high-performance electronic designs.

Pinout

The IRFH7085TRPBF is a power MOSFET manufactured by Infineon Technologies. It typically comes in a 5x6 mm PQFN package with a pin count of 8. This device is designed for efficient power conversion applications and features low on-resistance and high-speed switching capabilities.
Key functions and features include:
1. Low On-Resistance: This characteristic minimizes conduction losses, making the MOSFET efficient for power applications.

2. High-Speed Switching: It supports fast switching times, which is crucial for applications requiring quick transitions between on and off states.
3. Compact PQFN Package: The 5x6 mm package allows for efficient thermal performance and space-saving on PCB layouts.
4. Applications: Commonly used in synchronous rectification, DC-DC converters, and other power management applications due to its efficiency and compact size.
These features make the IRFH7085TRPBF suitable for use in various power conversion and management scenarios, particularly where space and efficiency are crucial. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.

Manufacturer

The IRFH7085TRPBF is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon is one of the top ten semiconductor companies globally and is known for producing a wide range of semiconductor solutions, including microcontrollers, power semiconductors, sensors, and security ICs. The company serves various industries, such as automotive, industrial, and consumer electronics. Infineon was originally part of Siemens AG, but it became an independent entity in 1999. The firm is recognized for its expertise in power electronics and is a leading supplier in areas like automotive electronics and security solutions.

Application

The IRFH7085TRPBF is a power MOSFET commonly used in various applications, including power management systems, DC-DC converters, motor drives, and load switching. Its low on-resistance and high current handling capabilities make it ideal for high-efficiency applications. It is often utilized in consumer electronics, automotive systems, and telecommunications equipment to enhance power conversion efficiency and thermal performance. Additionally, its compact package is suitable for space-constrained designs, making it favorable in portable devices and industrial automation applications.

Package

The IRFH7085TRPBF is packaged in a PQFN (Power Quad Flat No-lead) package type, which is designed to provide a compact, thermally efficient, and low-resistance form factor suitable for high-performance power applications.

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