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IRFH7085TRPBF
+NomenclatureMOSFET N-CH 60V 100A PQFN
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FabricantTechnologie Infineon
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Pièce fabricant #IRFH7085TRPBF
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Fiche technique IRFH7085TRPBF DataSheet
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Package TDSON-8
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En stock7607
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | StrongIRFET™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 3.2mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 3.7V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 165 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6460 pF @ 25 V |
| PowerDissipation(Max) | 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PQFN (5x6) |
Présentation
Description
Key specifications of the IRFH7085TRPBF include:
- N-channel MOSFET
- Maximum drain-source voltage (V_DS) of 30V
- Continuous drain current (I_D) of 100A
- On-resistance (R_DS(on)) as low as 1.5mΩ
- Gate charge (Q_g) of 54 nC at 10V gate-source voltage
The device comes in a PowerPAK SO-8 package, providing a compact form factor suitable for high-density circuit designs. It is used in applications such as DC-DC converters, synchronous rectification, and power management systems in computing, telecommunications, and consumer electronics. Its robust performance supports efficient thermal management, contributing to overall system reliability and efficiency.
Equivalent
1. NXP PSMN1R2-25YLD - Similar voltage and current ratings.
2. Infineon BSC100N06NS3G - Comparable specifications in a PowerPAK package.
3. ON Semiconductor NVMFS5C606N - Matching characteristics for power applications.
4. Vishay SiR876ADP - Close equivalent with similar Rds(on) and package type.
It's important to verify the electrical characteristics and package to ensure compatibility for your specific application.
Features
1. Voltage and Current Ratings: It typically features a drain-to-source voltage (V_DS) rating of 30V and a continuous drain current (I_D) of up to 100A, enabling high power handling capability.
2. R_DS(on): It has a low on-resistance (R_DS(on)) typically around 1.5 milliohms, which helps reduce power loss and improves efficiency.
3. Package Type: The device is available in a compact and thermally efficient PQFN package, which supports high-density designs.
4. Thermal Performance: It offers excellent thermal performance due to its package design, which aids in heat dissipation and enhances reliability.
5. Applications: Suitable for use in synchronous rectification, DC-DC converters, motor drives, and other power management applications.
6. Other Characteristics: It features fast switching speeds and a high-speed body diode, which contribute to improved performance in a variety of applications.
This MOSFET is designed to meet the demands of high-efficiency power conversion systems, making it ideal for compact and high-performance electronic designs.
Pinout
Key functions and features include:
1. Low On-Resistance: This characteristic minimizes conduction losses, making the MOSFET efficient for power applications.
2. High-Speed Switching: It supports fast switching times, which is crucial for applications requiring quick transitions between on and off states.
3. Compact PQFN Package: The 5x6 mm package allows for efficient thermal performance and space-saving on PCB layouts.
4. Applications: Commonly used in synchronous rectification, DC-DC converters, and other power management applications due to its efficiency and compact size.
These features make the IRFH7085TRPBF suitable for use in various power conversion and management scenarios, particularly where space and efficiency are crucial. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.