Images à titre indicatif uniquement
IRFH6200TRPBF
+NomenclatureMOSFET N-CH 20V 49A/100A 8PQFN
-
FabricantTechnologie Infineon
-
Pièce fabricant #IRFH6200TRPBF
-
Fiche technique IRFH6200TRPBF DataSheet
-
En stock9276
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 49A (Ta), 100A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 0.95mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 1.1V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 230 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 10890 pF @ 10 V |
| Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Présentation
Description
The IRFH6200TRPBF is a power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications, particularly in computing, telecommunications, and industrial sectors. This MOSFET is part of the HEXFET® series, known for its robustness and reliability.
Key features of the IRFH6200TRPBF include:
- N-channel MOSFET: Optimized for low on-resistance and fast switching.
- Voltage and Current Ratings: Typically, it features a drain-source voltage (V_ds) of around 20V and a continuous drain current (I_d) of approximately 80A at 25°C.
- Package: It is available in a PQFN package, which helps reduce the footprint on circuit boards and improves thermal performance.
- Applications: Suitable for DC-DC converters, load switches, and synchronous rectification.
Overall, the IRFH6200TRPBF is valued for its efficiency, compact design, and suitability for applications requiring high power density and compact space.
Key features of the IRFH6200TRPBF include:
- N-channel MOSFET: Optimized for low on-resistance and fast switching.
- Voltage and Current Ratings: Typically, it features a drain-source voltage (V_ds) of around 20V and a continuous drain current (I_d) of approximately 80A at 25°C.
- Package: It is available in a PQFN package, which helps reduce the footprint on circuit boards and improves thermal performance.
- Applications: Suitable for DC-DC converters, load switches, and synchronous rectification.
Overall, the IRFH6200TRPBF is valued for its efficiency, compact design, and suitability for applications requiring high power density and compact space.
Equivalent
The IRFH6200TRPBF is a power MOSFET. Equivalent products may include MOSFETs with similar voltage, current ratings, and package type. Examples could include the NTMFS5C604NL or the NTMFS5C628NL from ON Semiconductor, or the SiRA80DP from Vishay. Specific equivalents may vary based on the exact application requirements and parameters, so it's important to verify electrical specifications, thermal performance, and package compatibility when selecting an alternative.
Features
The IRFH6200TRPBF is a HEXFET® Power MOSFET designed by Infineon Technologies. It features a compact footprint in a PQFN 5x6 package, ideal for space-constrained applications. This MOSFET offers a maximum drain-source voltage (Vds) of 200V and a continuous drain current (Id) of up to 12.5A. It is characterized by low on-resistance (Rds(on)) of 0.055 ohms, which enhances efficiency by minimizing power loss. The device supports high-frequency switching applications, making it suitable for DC-DC converters, synchronous rectification, and motor drives.
The IRFH6200TRPBF also provides excellent thermal performance due to its package design, allowing for efficient heat dissipation. It includes features such as a low gate charge (Qg), which reduces the driving power required, and a low input capacitance that allows for faster switching speeds. Additionally, it is fully RoHS compliant, ensuring it meets environmental and safety standards. This MOSFET is an excellent choice for applications requiring robust performance, efficiency, and reliability.
The IRFH6200TRPBF also provides excellent thermal performance due to its package design, allowing for efficient heat dissipation. It includes features such as a low gate charge (Qg), which reduces the driving power required, and a low input capacitance that allows for faster switching speeds. Additionally, it is fully RoHS compliant, ensuring it meets environmental and safety standards. This MOSFET is an excellent choice for applications requiring robust performance, efficiency, and reliability.
Pinout
The IRFH6200TRPBF is a power MOSFET from Infineon Technologies. It features a 5-pin configuration typically packaged in a PQFN (Power Quad Flat No-Lead) format. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits, handling high power levels with efficient performance.
The key specifications include:
- Type: N-channel MOSFET
- Voltage rating: Typically around 30V
- Current rating: Can handle significant current, often around 100A, depending on conditions
- Rds(on): Low on-state resistance, enhancing efficiency
Pin functions in a typical 5-pin PQFN package are likely to include:
1. Gate: Controls the MOSFET's switching operation.
2. Drain: Connection for the load current flowing through the device.
3. Source: Returns the current to the ground.
4. Source Sense: Provides a separate path for the source to connect to external circuitry for sensing or measurement.
5. Drain Sense: Used for sensing the drain for protection or feedback purposes, if present.
For precise pin configuration, always refer to the manufacturer's datasheet.
The key specifications include:
- Type: N-channel MOSFET
- Voltage rating: Typically around 30V
- Current rating: Can handle significant current, often around 100A, depending on conditions
- Rds(on): Low on-state resistance, enhancing efficiency
Pin functions in a typical 5-pin PQFN package are likely to include:
1. Gate: Controls the MOSFET's switching operation.
2. Drain: Connection for the load current flowing through the device.
3. Source: Returns the current to the ground.
4. Source Sense: Provides a separate path for the source to connect to external circuitry for sensing or measurement.
5. Drain Sense: Used for sensing the drain for protection or feedback purposes, if present.
For precise pin configuration, always refer to the manufacturer's datasheet.
Manufacturer
The IRFH6200TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that specializes in producing a wide range of semiconductor products including microcontrollers, power semiconductors, sensors, and security ICs. These products find applications in various industries such as automotive, industrial, consumer electronics, and security solutions. Infineon is known for its focus on energy efficiency, mobility, and security, providing innovative solutions that help to address global challenges.
Application
The IRFH6200TRPBF is a power MOSFET typically used in applications requiring efficient power management and high-speed switching. Common application areas include:
1. DC-DC Converters: Utilized in buck or boost converters for voltage regulation.
2. Power Supply Units: Integrated into switched-mode power supplies for electronics.
3. Motor Drives: Applied in motor control circuits due to its fast switching capability.
4. Battery Management Systems: Used for charging and discharging control in battery packs.
5. Telecommunications Equipment: Employed for efficient power delivery in communication devices.
6. Computer Peripherals: Used in power management for computer hardware.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
1. DC-DC Converters: Utilized in buck or boost converters for voltage regulation.
2. Power Supply Units: Integrated into switched-mode power supplies for electronics.
3. Motor Drives: Applied in motor control circuits due to its fast switching capability.
4. Battery Management Systems: Used for charging and discharging control in battery packs.
5. Telecommunications Equipment: Employed for efficient power delivery in communication devices.
6. Computer Peripherals: Used in power management for computer hardware.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
Package
The IRFH6200TRPBF is a MOSFET housed in a PQFN (Power Quad Flat No-lead) 5mm x 6mm package. This type of packaging is designed for high efficiency and performance, offering low thermal resistance and compact size, suitable for high-density applications.
