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IRFH5406TRPBF
+NomenclatureMOSFET N-CH 60V 11A/40A 8PQFN
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FabricantTechnologie Infineon
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Pièce fabricant #IRFH5406TRPBF
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Fiche technique IRFH5406TRPBF DataSheet
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRFH5406 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1256 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package | 8-PowerVDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Description
- Voltage Rating: 60V
- Current Rating: 140A (pulsed) / 100A (continuous)
- Low On-Resistance (RDS(on)): 2.2mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: PQFN 5x6mm, suitable for compact designs
Ideal for DC-DC converters, motor drives, and power management in automotive, industrial, and computing systems. Its low conduction losses and robust thermal performance enhance efficiency in high-current applications.
Equivalent
- IRF1404PBF (40V, 162A)
- IRF1405PBF (55V, 169A)
- IRF3205PBF (55V, 110A)
- IRL40B209 (40V, 62A)
- AON6220 (40V, 60A)
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 60V
- Current Rating: 130A (continuous), 520A (pulsed)
- Low On-Resistance (RDS(on)): 1.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PQFN 5x6mm (PowerPak® SO-8 compatible)
- Gate Charge (Qg): 120nC (typical)
- Avalanche Rated: Robust for rugged applications
- Low Gate Drive (VGS): 4.5V (fully enhanced at 10V)
Ideal for DC-DC converters, motor drives, and power management in automotive, industrial, and computing systems.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 60V
- ID: 140A (pulsed) / 100A (continuous)
- Low RDS(on): 2.2mΩ (max at VGS=10V)
- Logic-level gate drive (VGS ≥ 4.5V)
Applications:
- High-current switching (motor control, power supplies, DC-DC converters).
Application
1. Switching Power Supplies – Efficient DC-DC converters and voltage regulators.
2. Motor Control – Drives in automotive, industrial, and robotics applications.
3. LED Lighting – High-efficiency drivers for solid-state lighting.
4. Battery Management – Protection circuits and power distribution in portable devices.
5. Solar Inverters – Energy conversion in renewable power systems.
Its low on-resistance (RDS(on)) and high current handling (up to 100A) make it ideal for high-power, high-efficiency applications.
