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IRFH5025TRPBF
+NomenclatureMOSFET N-CH 250V 3.8A 8PQFN
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FabricantTechnologie Infineon
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Pièce fabricant #IRFH5025TRPBF
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En stock9220
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 50 V |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | IRFH5025 |
Présentation
Description
IRFH5025TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a maximum drain-source voltage of 55V and a continuous drain current rating of 50A, making it suitable for power management tasks in various electronic devices. The device is characterized by low on-resistance (R_DS(on)), which minimizes power losses during operation, enhancing efficiency in power supply circuits and switching applications.
The IRFH5025TRPBF is housed in a TO-220 package, allowing for effective thermal management, which is crucial in high-current applications. It is also RoHS compliant, ensuring it meets environmental regulations. Overall, this MOSFET is widely used in automotive, industrial, and consumer electronics for tasks such as motor control, power conversion, and voltage regulation, providing reliability and performance in demanding conditions.
The IRFH5025TRPBF is housed in a TO-220 package, allowing for effective thermal management, which is crucial in high-current applications. It is also RoHS compliant, ensuring it meets environmental regulations. Overall, this MOSFET is widely used in automotive, industrial, and consumer electronics for tasks such as motor control, power conversion, and voltage regulation, providing reliability and performance in demanding conditions.
Equivalent
The IRFH5025TRPBF is an N-channel MOSFET. Equivalent products include:
1. BSS138
2. SI2302
3. MMBF170
4. 2N7000
5. BSS84 (for P-channel)
Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.
1. BSS138
2. SI2302
3. MMBF170
4. 2N7000
5. BSS84 (for P-channel)
Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.
Features
The IRFH5025TRPBF is a high-performance N-channel MOSFET designed for various power switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 25V, making it suitable for low-voltage applications.
2. Current Rating: Continuous drain current (Id) of up to 50A, providing high current handling capabilities.
3. On-Resistance (Rds(on)): Low on-resistance typically around 8.5 mΩ at Vgs of 10V, ensuring efficient power conversion and reduced heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): Gate threshold voltage range of 1V to 2.5V, enabling easy drive with low-voltage digital signals.
5. Package: Available in a TO-262 package, facilitating easy mounting and heat dissipation.
6. Fast Switching Speed: Designed for high-speed switching applications, suitable for power supplies and motor drivers.
Overall, the IRFH5025TRPBF is ideal for applications requiring efficient power management and thermal performance.
1. Voltage Rating: Maximum drain-source voltage (Vds) of 25V, making it suitable for low-voltage applications.
2. Current Rating: Continuous drain current (Id) of up to 50A, providing high current handling capabilities.
3. On-Resistance (Rds(on)): Low on-resistance typically around 8.5 mΩ at Vgs of 10V, ensuring efficient power conversion and reduced heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): Gate threshold voltage range of 1V to 2.5V, enabling easy drive with low-voltage digital signals.
5. Package: Available in a TO-262 package, facilitating easy mounting and heat dissipation.
6. Fast Switching Speed: Designed for high-speed switching applications, suitable for power supplies and motor drivers.
Overall, the IRFH5025TRPBF is ideal for applications requiring efficient power management and thermal performance.
Pinout
The IRFH5025TRPBF is a N-channel MOSFET that comes in a TO-220 package, featuring a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IRFH5025TRPBF is designed for high-speed switching applications and is characterized by low on-resistance, making it suitable for power management tasks in various electronic applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IRFH5025TRPBF is designed for high-speed switching applications and is characterized by low on-resistance, making it suitable for power management tasks in various electronic applications.
Manufacturer
The IRFH5025TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in a wide range of products, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and performance. Infineon is known for its innovation in power management and automotive applications, contributing to advancements in technology such as electric vehicles and smart grids.
Application
The IRFH5025TRPBF is an N-channel MOSFET widely used in various applications, including power management, DC-DC converters, and motor control. Its high efficiency and low on-resistance make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it is employed in high-frequency applications and switching power supplies, where rapid switching and thermal performance are critical. Its versatility allows for use in consumer electronics, LED drivers, and battery management systems. Overall, the IRFH5025TRPBF is ideal for applications requiring reliable performance in high-power and high-efficiency environments.
Package
The IRFH5025TRPBF is packaged in a TO-220 configuration. This package type is commonly used for high-power applications, providing effective thermal performance and allowing for easy mounting to heatsinks.
