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IRFD120
+NomenclatureMOSFET N-CH 100V 1.3A 4DIP
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FabricantSiliconix
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Pièce fabricant #IRFD120
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En stock2833
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Spécifications
| Attribut | Valeur |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRFD120 |
Présentation
Description
IRFD120, or Introduction to International Relations and Foreign Diplomacy, is a foundational course designed to explore the complexities of global interactions and the role of diplomacy in international affairs. The course typically covers key concepts in international relations, including theories such as realism, liberalism, and constructivism, as well as the historical context of international diplomacy.
Students learn about the actors in international relations, including states, non-state actors, and international organizations, and the mechanisms through which they interact. Topics may include conflict resolution, international law, global governance, and the impact of globalization on state sovereignty.
Through case studies and discussions, IRFD120 encourages critical thinking about contemporary issues such as terrorism, human rights, and environmental challenges, fostering a deeper understanding of how diplomatic strategies can influence global stability and peace. The course aims to equip students with analytical tools to assess international events and the dynamics of power within the global system.
Students learn about the actors in international relations, including states, non-state actors, and international organizations, and the mechanisms through which they interact. Topics may include conflict resolution, international law, global governance, and the impact of globalization on state sovereignty.
Through case studies and discussions, IRFD120 encourages critical thinking about contemporary issues such as terrorism, human rights, and environmental challenges, fostering a deeper understanding of how diplomatic strategies can influence global stability and peace. The course aims to equip students with analytical tools to assess international events and the dynamics of power within the global system.
Equivalent
The IRFD120 is a N-channel MOSFET designed for power applications. Equivalent products include the STP16NF06, FQD16N06L, and IRF320. Ensure to check specifications like voltage, current ratings, and RDS(on) for compatibility in your application.
Features
The IRFD120 is an N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Ratings: It typically supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Capabilities: The IRFD120 can handle a continuous drain current (I_D) of up to 40A, allowing for efficient operation in high current applications.
3. Low R_DS(on): It boasts a low on-resistance, typically around 0.08 ohms at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching Speed: The device is designed for quick turn-on and turn-off speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It has a high junction-to-ambient thermal resistance, facilitating better heat dissipation.
6. Package Type: The IRFD120 is often available in a TO-220 package, which simplifies heat sinking and mounting in various applications.
These features make the IRFD120 suitable for power supplies, motor control, and various other electronic circuits.
1. Voltage Ratings: It typically supports a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Capabilities: The IRFD120 can handle a continuous drain current (I_D) of up to 40A, allowing for efficient operation in high current applications.
3. Low R_DS(on): It boasts a low on-resistance, typically around 0.08 ohms at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching Speed: The device is designed for quick turn-on and turn-off speeds, making it ideal for high-frequency applications.
5. Thermal Performance: It has a high junction-to-ambient thermal resistance, facilitating better heat dissipation.
6. Package Type: The IRFD120 is often available in a TO-220 package, which simplifies heat sinking and mounting in various applications.
These features make the IRFD120 suitable for power supplies, motor control, and various other electronic circuits.
Pinout
The IRFD120 is an N-channel MOSFET commonly used in power switching applications. It has a total of three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source, effectively turning the device on.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. It serves as the return path for the current.
The IRFD120 is capable of handling high current and voltage applications, making it suitable for various electronic devices and circuits.
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source, effectively turning the device on.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit. It serves as the return path for the current.
The IRFD120 is capable of handling high current and voltage applications, making it suitable for various electronic devices and circuits.
Manufacturer
The IRFD120 is manufactured by International Rectifier, which is a subsidiary of Infineon Technologies. International Rectifier specializes in power management solutions and semiconductor technologies. The company is known for its development and production of various types of power MOSFETs, integrated circuits, and other semiconductor devices used in a wide range of applications, including automotive, industrial, and consumer electronics. Infineon Technologies, the parent company, is a global leader in semiconductor solutions, focusing on automotive, industrial, and security markets. International Rectifier's expertise in power management has made it a significant player in the semiconductor industry, particularly in the field of energy-efficient technologies.
Application
The IRFD120 is an N-channel MOSFET commonly used in various applications including:
1. Switching Power Supplies: Efficiently switches high currents.
2. Motor Control: Drives DC motors in robotics and automation.
3. Power Management: Regulates voltage in portable devices.
4. LED Drivers: Controls LED lighting systems for dimming and effects.
5. Audio Amplifiers: Used in power stages for audio amplification.
6. Overcurrent Protection: Acts as a switch in protection circuits.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. Switching Power Supplies: Efficiently switches high currents.
2. Motor Control: Drives DC motors in robotics and automation.
3. Power Management: Regulates voltage in portable devices.
4. LED Drivers: Controls LED lighting systems for dimming and effects.
5. Audio Amplifiers: Used in power stages for audio amplification.
6. Overcurrent Protection: Acts as a switch in protection circuits.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The IRFD120 is typically packaged in a TO-220 or TO-247 package type, which provides good thermal performance for power applications.
