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IRFB7430PBF
+NomenclatureMOSFET N CH 40V 195A TO220
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FabricantTechnologie Infineon
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Pièce fabricant #IRFB7430PBF
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Fiche technique IRFB7430PBF DataSheet
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Package TO-220
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En stock5760
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 195A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 1.3mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 460 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 14240 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Présentation
Description
The IRFB7430PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Manufactured by Infineon Technologies, it features a 40V maximum drain-to-source voltage and a low on-state resistance (RDS(on)), which reduces power loss and improves efficiency in power conversion processes. This N-channel MOSFET has a continuous drain current capability of up to 195A, allowing it to handle high-power applications effectively.
Key features include advanced processing technology for reduced gate charge, which enhances switching performance and minimizes energy loss. Its robust construction ensures reliability under demanding conditions, making it suitable for use in automotive, industrial, and consumer applications. The device is packaged in a TO-220, which is known for good thermal performance and ease of mounting.
Overall, the IRFB7430PBF is ideal for high-efficiency power management, motor control applications, and other systems that require high-current handling and fast switching capabilities.
Key features include advanced processing technology for reduced gate charge, which enhances switching performance and minimizes energy loss. Its robust construction ensures reliability under demanding conditions, making it suitable for use in automotive, industrial, and consumer applications. The device is packaged in a TO-220, which is known for good thermal performance and ease of mounting.
Overall, the IRFB7430PBF is ideal for high-efficiency power management, motor control applications, and other systems that require high-current handling and fast switching capabilities.
Equivalent
The IRFB7430PBF is a MOSFET used for high power and high efficiency applications. Equivalent products include:
1. STP200N3LL from STMicroelectronics
2. IPP200N25N3 from Infineon Technologies
3. NTP200N08 from ON Semiconductor
These alternatives offer similar voltage, current ratings, and performance characteristics, but always verify specifications with the manufacturer’s datasheets to ensure compatibility with your specific application.
1. STP200N3LL from STMicroelectronics
2. IPP200N25N3 from Infineon Technologies
3. NTP200N08 from ON Semiconductor
These alternatives offer similar voltage, current ratings, and performance characteristics, but always verify specifications with the manufacturer’s datasheets to ensure compatibility with your specific application.
Features
The IRFB7430PBF is a power MOSFET designed for high-efficiency power conversion applications. Key features include:
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 40V and a continuous drain current (I_D) of 195A, making it suitable for high-power applications.
2. Low On-Resistance: The device features a low on-state resistance (R_DS(on)) of approximately 1.5 milliohms, which minimizes power loss and enhances efficiency in switching applications.
3. Package: It comes in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink.
4. Thermal Performance: It supports a maximum junction temperature (T_J) of 175°C, allowing it to operate reliably under high-temperature conditions.
5. Fast Switching: The device is characterized by its rapid switching speeds, which help reduce switching losses.
6. RoHS Compliant: The device is lead-free and complies with Restriction of Hazardous Substances (RoHS) standards, making it environmentally friendly.
These features make the IRFB7430PBF ideal for use in automotive, industrial, and consumer electronics applications where efficient power management is crucial.
1. Voltage and Current Ratings: It has a drain-to-source voltage (V_DS) rating of 40V and a continuous drain current (I_D) of 195A, making it suitable for high-power applications.
2. Low On-Resistance: The device features a low on-state resistance (R_DS(on)) of approximately 1.5 milliohms, which minimizes power loss and enhances efficiency in switching applications.
3. Package: It comes in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink.
4. Thermal Performance: It supports a maximum junction temperature (T_J) of 175°C, allowing it to operate reliably under high-temperature conditions.
5. Fast Switching: The device is characterized by its rapid switching speeds, which help reduce switching losses.
6. RoHS Compliant: The device is lead-free and complies with Restriction of Hazardous Substances (RoHS) standards, making it environmentally friendly.
These features make the IRFB7430PBF ideal for use in automotive, industrial, and consumer electronics applications where efficient power management is crucial.
Pinout
The IRFB7430PBF is a power MOSFET designed for high-efficiency applications. It typically comes in a TO-220 package, which has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): The drain is the main terminal through which current flows from the external circuit into the MOSFET when it is in the "on" state.
3. Source (S): This terminal allows current to exit the MOSFET to the external circuit. For an N-channel MOSFET, current flows from the drain to the source when the device is on.
The IRFB7430PBF is notable for its low on-resistance and is used in applications like DC-DC converters, motor drives, and other power management systems.
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): The drain is the main terminal through which current flows from the external circuit into the MOSFET when it is in the "on" state.
3. Source (S): This terminal allows current to exit the MOSFET to the external circuit. For an N-channel MOSFET, current flows from the drain to the source when the device is on.
The IRFB7430PBF is notable for its low on-resistance and is used in applications like DC-DC converters, motor drives, and other power management systems.
Manufacturer
The IRFB7430PBF is manufactured by Infineon Technologies, a leading semiconductor manufacturer. Infineon is a German company that specializes in designing and producing a wide range of semiconductor solutions. They focus on areas such as automotive, industrial power control, power management & multimarket, and digital security solutions. Infineon's products are integral to various applications, including automotive electronics, industrial electronics, and chip card and security applications. Known for their innovation and quality, Infineon plays a significant role in advancing technology in power semiconductors, microcontrollers, sensors, and secure communications.
Application
The IRFB7430PBF is a power MOSFET typically used in high-efficiency power management applications. Its primary areas of application include:
1. Automotive Systems: Used in electric and hybrid vehicle powertrains for efficient power conversion.
2. Power Supply Units: Utilized in switching power supplies and DC-DC converters for improved efficiency.
3. Motor Drives: Supports high-performance motor control in industrial and consumer electronics.
4. Renewable Energy Systems: Applied in solar inverters and wind turbine controls for efficient energy management.
5. Battery Management Systems: Enhances battery protection and energy efficiency in various applications.
These areas leverage the MOSFET's low RDS(on), fast switching capabilities, and high current handling.
1. Automotive Systems: Used in electric and hybrid vehicle powertrains for efficient power conversion.
2. Power Supply Units: Utilized in switching power supplies and DC-DC converters for improved efficiency.
3. Motor Drives: Supports high-performance motor control in industrial and consumer electronics.
4. Renewable Energy Systems: Applied in solar inverters and wind turbine controls for efficient energy management.
5. Battery Management Systems: Enhances battery protection and energy efficiency in various applications.
These areas leverage the MOSFET's low RDS(on), fast switching capabilities, and high current handling.
Package
The IRFB7430PBF is typically available in a TO-220 package. This package type is commonly used for power transistors and provides efficient heat dissipation with its metal tab for mounting on a heatsink.
