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IRFB5620
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FabricantTechnologie Infineon
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Pièce fabricant #IRFB5620
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Fiche technique IRFB5620 DataSheet
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En stock21195
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Spécifications
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Présentation
Description
Key features of the IRFB5620 include a maximum drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of approximately 68A. It has a low on-resistance (R_ds(on)) which ensures minimal power loss during operation, making it suitable for use in power supplies, motor drives, and other high-current applications.
The device is housed in a TO-220 package, which provides efficient heat dissipation and ease of mounting on heatsinks. It is designed to operate efficiently even at high frequencies, thanks to its fast switching speed. The IRFB5620 is widely used in both consumer electronics and industrial equipment due to its reliability and performance efficiency.
Equivalent
1. STMicroelectronics STP75NF75
2. Vishay SiHF75N75
3. NXP PSMN075-75YS
4. ON Semiconductor FDP75N75
Ensure compatibility in terms of voltage, current ratings, and package type before substituting in circuits. Always verify with datasheets for precise specifications.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of approximately 68A, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET features a low on-state resistance (R_ds(on)), which minimizes power loss and improves efficiency in switching operations.
3. Fast Switching: It offers fast switching capabilities, which enhance performance in high-frequency applications.
4. Thermal Performance: The device has a good thermal resistance, allowing it to handle high temperatures effectively, which is crucial for maintaining performance under heavy loads.
5. Package Type: It is typically available in a TO-220 package, which is widely used for power components due to its effective heat dissipation properties.
6. Applications: The IRFB5620 is used in a variety of applications including power supplies, motor drives, and DC-DC converters due to its reliability and efficiency.
These features make the IRFB5620 a versatile choice for high-power electronic designs.
Pinout
1. Gate (G): This pin is responsible for controlling the operation of the MOSFET. A voltage applied to the gate regulates the conductivity between the drain and source, effectively turning the MOSFET on or off.
2. Drain (D): The drain is the pin through which the primary current flows when the MOSFET is in the 'on' state. It's connected to the load or the power supply.
3. Source (S): The source is the pin through which the current exits the MOSFET. It is typically connected to ground or the negative side of the power supply in many circuits.
The IRFB5620 is known for its low on-resistance and high current-handling capability, making it suitable for high-performance power applications.
Manufacturer
Application
1. Power Supply Systems: Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
2. Motor Control: Used in motor drives and controllers for industrial and automotive applications.
3. Inverters: Applied in DC-AC inverters for solar power systems and other renewable energy solutions.
4. Battery Management Systems: Used for efficient battery charging and discharging.
5. Power Amplifiers: Implemented in audio and RF amplifiers for better performance.
6. Lighting Systems: Used in LED drivers and other advanced lighting solutions.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities.