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IRFB4227PBF
+NomenclatureMOSFET N-CH 200V 65A TO220AB
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FabricantTechnologie Infineon
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Pièce fabricant #IRFB4227PBF
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Fiche technique IRFB4227PBF DataSheet
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Package TO220-3
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En stock3207
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Spécifications
| Attribut | Valeur |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 65A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 46A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 4600 pF @ 25 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Présentation
Description
- Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of around 65A, making it suitable for medium to high-power applications.
- R_DS(on): The device has a low on-state resistance, which minimizes conduction losses and enhances efficiency.
- Package: It is commonly available in a TO-220 package, which offers good thermal performance and ease of mounting.
- Temperature: It's rated for operation over a wide temperature range, ensuring reliability in various environments.
- Applications: Suitable for use in DC-DC converters, motor control systems, and as a switch in various electronic applications.
This MOSFET is part of Infineon's HEXFET series, known for its robustness and efficiency, making it a popular choice for engineers designing high-performance power systems.
Equivalent
Features
1. N-channel MOSFET: Utilizes n-channel technology, offering better conductivity and faster switching.
2. Voltage and Current Ratings: It typically operates at around 200V and can handle continuous drain current of approximately 68A.
3. Low On-Resistance: Offers low R_DS(on), minimizing power losses and improving efficiency.
4. Fast Switching: Designed for fast switching speeds, ideal for high-frequency applications.
5. Thermal Performance: Comes in a TO-220 package, providing efficient heat dissipation.
6. Rugged Design: Enhanced ruggedness for reliable performance under demanding conditions.
7. Applications: Suitable for use in power supplies, motor drives, and other high-power circuits.
These features make the IRFB4227PBF an effective choice for various high-power and efficiency-optimized applications.
Pinout
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to the gate determines whether the MOSFET is on or off.
2. Drain (D): This is the pin through which the main current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin serves as the return path for the current. It is typically connected to ground in most circuit applications.
These MOSFETs are commonly used for high-speed switching applications due to their efficiency and reliability. They are suitable for various applications, including power supplies, motor drivers, and other high-power circuits.
Manufacturer
Application
1. Switching Power Supplies: Used in DC-DC converters for efficient power conversion.
2. Motor Drives: Suitable for use in brushless DC motors and other motor control applications.
3. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS).
4. Audio Amplifiers: Utilized in Class D amplifiers for efficient audio output.
5. Battery Chargers: Used in fast-charging systems for improved energy efficiency.
These applications benefit from the IRFB4227PBF’s low on-resistance and high-speed switching capabilities.