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IRF7606TRPBF
+NomenclatureMOSFET P-CH 30V 3.6A MICRO8
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FabricantTechnologie Infineon
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Pièce fabricant #IRF7606TRPBF
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Fiche technique IRF7606TRPBF DataSheet
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En stock1633
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF7606 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro8™ |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Description
The IRF7606TRPBF operates with a maximum drain-source voltage (Vds) and continuous drain current that are suitable for various power electronics applications. It is commonly used in DC-DC converters, motor controllers, and other power supply circuits. The device is also known for its robustness, including high temperature and voltage tolerance, which ensures reliability in demanding environments.
Additionally, this MOSFET comes in a RoHS-compliant package, making it environmentally friendly. Its design and performance cater to applications that require efficient switching and power handling with minimal energy loss.
Equivalent
1. NTD12N10
2. FQP12N10
3. STP12NM50N
4. SPB17N80C3
5. BUK954R8-60E
Ensure compatibility by checking the specific voltage, current ratings, and other parameters. Always refer to the datasheets for detailed comparisons.
Features
1. Voltage Rating: It has a drain-to-source voltage (V_ds) rating of 20V.
2. Continuous Drain Current: The device can handle a continuous drain current of 5.8A at 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.022 ohms, which helps reduce power loss and improve efficiency.
4. Package: It comes in a compact SO-8 package, making it suitable for space-constrained applications.
5. Drive Voltage: The MOSFET can be driven with a gate-source voltage as low as 4.5V, which is compatible with low-voltage logic levels.
6. Thermal Performance: It offers good thermal performance, with a junction-to-ambient thermal resistance of 62°C/W.
7. Applications: Commonly used in DC-DC converters, load switches, and power management systems.
These features make the IRF7606TRPBF an excellent choice for efficient and compact power management solutions.
Pinout
The SO-8 package comprises 8 pins. Each MOSFET within this dual configuration includes three terminals: Gate (G), Drain (D), and Source (S). The typical pin configuration is as follows for each MOSFET:
- Pin 1: Source 1
- Pin 2: Gate 1
- Pin 3: Source 2
- Pin 4: Gate 2
- Pin 5, 6: Drain 2
- Pin 7, 8: Drain 1
Pins 5 and 6 are internally connected to Drain 2, and pins 7 and 8 are connected to Drain 1 to allow for better current handling capability. The IRF7606TRPBF is used for switching applications due to its efficiency and compact design, providing high-speed switching with low on-resistance.
Manufacturer
Application
1. DC-DC Converters: Essential in power conversion systems for improving efficiency.
2. Motor Drives: Facilitates efficient motor control in automotive and industrial applications.
3. Switching Power Supplies: Used for high-frequency switching to enhance power supply performance.
4. Load Switches: Offers reliable performance in switching applications for managing power distribution.
5. Inverters: Key component in inverters for renewable energy systems like solar inverters.
6. Battery Management Systems: Ensures effective charging and discharging processes.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.