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IRF7530TRPBF
+NomenclatureMOSFET 2N-CH 20V 5.4A MICRO8
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FabricantTechnologie Infineon
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Pièce fabricant #IRF7530TRPBF
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En stock4005
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| PartStatus | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 5.4A |
| RdsOn(Max)@Id,Vgs | 30mOhm @ 5.4A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 26nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1310pF @ 15V |
| Power-Max | 1.3W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| SupplierDevicePackage | Micro8™ |
| BaseProductNumber | IRF7530 |
Présentation
Description
The IRF7530TRPBF is an N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance (R_DS(on)) of approximately 6.5 mΩ, which minimizes power losses during operation. The device is rated for a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 80A, making it suitable for various applications including power management, DC-DC converters, and motor control.
This MOSFET is characterized by fast switching speeds and high thermal stability, allowing for efficient performance in demanding conditions. The IRF7530TRPBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its gate threshold voltage (V_GS(th)) is relatively low, enabling it to be driven easily by standard gate drivers.
The "TRPBF" designation indicates that the part is RoHS-compliant, making it environmentally friendly. Overall, the IRF7530TRPBF is a reliable choice for designers seeking robust performance in compact electronic designs.
This MOSFET is characterized by fast switching speeds and high thermal stability, allowing for efficient performance in demanding conditions. The IRF7530TRPBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting. Its gate threshold voltage (V_GS(th)) is relatively low, enabling it to be driven easily by standard gate drivers.
The "TRPBF" designation indicates that the part is RoHS-compliant, making it environmentally friendly. Overall, the IRF7530TRPBF is a reliable choice for designers seeking robust performance in compact electronic designs.
Equivalent
The IRF7530TRPBF is an N-channel MOSFET with specific voltage and current ratings. Equivalent products include the STP35NF20, FQP30N20, and AOD3184. Ensure to check parameters like V_DS, I_D, R_DS(on), and package type to confirm compatibility for your application.
Features
The IRF7530TRPBF is an N-channel MOSFET designed for high-performance power applications. Its key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The continuous drain current (Id) is up to 70A, allowing it to handle significant load currents.
3. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 2.5V, facilitating easy drive with low-voltage logic levels.
4. Low On-Resistance: With an Rds(on) of approximately 11 mΩ at Vgs = 10V, it minimizes conduction losses and improves efficiency.
5. Fast Switching Speed: This MOSFET supports fast switching characteristics, beneficial for applications like switching power supplies and motor control.
6. Package Type: It comes in a TO-220 package, which provides good thermal performance for heat dissipation.
These features make the IRF7530TRPBF suitable for various applications in power management and control.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The continuous drain current (Id) is up to 70A, allowing it to handle significant load currents.
3. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 2.5V, facilitating easy drive with low-voltage logic levels.
4. Low On-Resistance: With an Rds(on) of approximately 11 mΩ at Vgs = 10V, it minimizes conduction losses and improves efficiency.
5. Fast Switching Speed: This MOSFET supports fast switching characteristics, beneficial for applications like switching power supplies and motor control.
6. Package Type: It comes in a TO-220 package, which provides good thermal performance for heat dissipation.
These features make the IRF7530TRPBF suitable for various applications in power management and control.
Pinout
The IRF7530TRPBF is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This is where the current enters the MOSFET from the load. The drain connects to the positive side of the load in a typical application.
3. Source (S): This pin is connected to the ground or negative side of the circuit. Current exits the MOSFET through the source when the device is on.
The IRF7530TRPBF is designed for high-speed switching applications and is suitable for use in power management and motor control circuits. It has a low R_DS(on) for efficient operation.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate turns the MOSFET on or off, allowing current to flow between the drain and source.
2. Drain (D): This is where the current enters the MOSFET from the load. The drain connects to the positive side of the load in a typical application.
3. Source (S): This pin is connected to the ground or negative side of the circuit. Current exits the MOSFET through the source when the device is on.
The IRF7530TRPBF is designed for high-speed switching applications and is suitable for use in power management and motor control circuits. It has a low R_DS(on) for efficient operation.
Manufacturer
The IRF7530TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer that specializes in a wide range of applications, including automotive, industrial, communication, and consumer electronics. The company is known for developing innovative power management solutions, microcontrollers, and security technologies. Infineon plays a crucial role in the evolving landscape of semiconductor technology, focusing on energy efficiency and smart solutions for various industries.
Application
The IRF7530TRPBF is a N-channel MOSFET commonly used in various applications, including:
1. Power Management: Employed in DC-DC converters and power supplies for efficient switching.
2. Motor Control: Utilized in motor drivers for controlling speed and direction in electric motors.
3. Load Switching: Acts as a switch for connecting/disconnecting loads in electronic circuits.
4. Battery Management: Used in battery charging circuits for efficient power delivery.
5. Amplifiers: Integrated in audio and RF amplifiers for signal amplification.
These applications benefit from its low on-resistance and fast switching capabilities.
1. Power Management: Employed in DC-DC converters and power supplies for efficient switching.
2. Motor Control: Utilized in motor drivers for controlling speed and direction in electric motors.
3. Load Switching: Acts as a switch for connecting/disconnecting loads in electronic circuits.
4. Battery Management: Used in battery charging circuits for efficient power delivery.
5. Amplifiers: Integrated in audio and RF amplifiers for signal amplification.
These applications benefit from its low on-resistance and fast switching capabilities.
Package
The IRF7530TRPBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power MOSFETs, allowing for efficient thermal management and easy mounting on heatsinks.
