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IRF720S
+NomenclatureMOSFET N-CH 400V 3.3A D2PAK
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FabricantSiliconix
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Pièce fabricant #IRF720S
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Fiche technique IRF720S DataSheet
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En stock1403
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V |
| Current - Continuous Drain(Id) @ 25°C | 3.3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.8Ohm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 410 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Présentation
Description
This MOSFET is designed with a low on-resistance, which ensures efficient performance with minimal power loss during operation. The IRF720S is often used in power supplies, motor control circuits, and other applications that require reliable high-speed switching. Its construction allows for fast switching speeds, enhancing the overall efficiency of the electronic device it is integrated into.
In terms of packaging, the IRF720S is commonly available in a TO-220 form factor, providing ease of installation and good thermal performance. This makes it a popular choice in both industrial and consumer electronic devices that demand robust and efficient power handling capabilities.
Equivalent
1. STMicroelectronics STP11NM50
2. Fairchild Semiconductor FDPF5N50U
3. ON Semiconductor NTP6N50E
4. Vishay Siliconix SiHF20N50C
5. Infineon IPP50R399CP
Ensure compatibility by checking specific parameters like voltage, current, and package type before substitution.
Features
1. High Voltage Capacity: It can handle a maximum drain-source voltage (Vds) of up to 400V, making it suitable for high-voltage applications.
2. Current Handling: It supports a continuous drain current (Id) of up to 2.2A at 25°C, which makes it capable of driving moderate loads.
3. Low On-Resistance: The MOSFET has a low on-state resistance (Rds(on)) of 3.0Ω, which ensures efficient operation with minimal power loss.
4. Fast Switching Speed: Designed for fast switching, the IRF720S is suitable for high-frequency applications.
5. Thermal Performance: It features good thermal stability and can operate effectively within a junction temperature range of -55°C to 150°C.
6. Package Type: It is available in a TO-251 (IPAK) package, facilitating easy mounting and good thermal management.
These features make the IRF720S ideal for use in power supplies, motor controls, and other applications requiring efficient high-voltage and current handling.
Pinout
1. Pin 1 (Gate): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Pin 2 (Drain): This pin is the main current-carrying terminal. In power applications, it is connected to the load.
3. Pin 3 (Source): This pin is connected to the ground or return path in the circuit. It is the terminal through which the current exits the transistor.
Additionally, the tab in the package is internally connected to the drain and is often used for heat dissipation purposes. The IRF720S is designed for high-speed switching applications and can handle significant power levels, making it suitable for use in various power management applications.
Manufacturer
Application
1. Power Supply Units: Utilized in switch-mode power supplies (SMPS) for improved efficiency and compact design.
2. Motor Drives: Suitable for motor control circuits due to its high-speed switching capabilities.
3. Inverters: Employed in DC-AC inverters, especially in renewable energy systems like solar inverters.
4. Lighting Systems: Used in LED drivers and electronic ballasts for fluorescent lighting.
5. Audio Amplifiers: Enhances efficiency in Class D amplifiers.
6. Telecommunications: Supports power management in telecom infrastructure equipment.
Its robust design and thermal performance make it versatile for these high-power applications.