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IRF6648TRPBF
+NomenclatureMOSFET N-CH 60V 86A DIRECTFET MN
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FabricantTechnologie Infineon
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Pièce fabricant #IRF6648TRPBF
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Fiche technique IRF6648TRPBF DataSheet
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En stock2948
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Spécifications
| Attribut | Valeur |
| Series | HEXFET® |
| Part Status | Active |
| Base Product Number | IRF6648 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 25 V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MN |
| Package / Case | DirectFET™ Isometric MN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Description
The IRF6648TRPBF is a power MOSFET transistor designed for high-efficiency applications, often used in power management and conversion systems. It is manufactured by Infineon Technologies, following their acquisition of International Rectifier. This MOSFET features a robust build, capable of handling high currents and voltages, making it suitable for demanding electronic applications.
Key specifications include a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of 22A. It has a low on-resistance (R_DS(on)), which minimizes power losses, enhancing overall efficiency. The IRF6648TRPBF also boasts fast switching speeds, which are crucial for high-frequency applications.
The transistor is housed in a TO-252 package, which provides a compact form factor while facilitating efficient heat dissipation. Its performance characteristics make it ideal for use in DC-DC converters, motor drives, and other high-power applications. The IRF6648TRPBF's reliability and efficiency contribute to its popularity in both consumer electronics and industrial applications.
Key specifications include a maximum drain-source voltage (V_DS) of 150V and a continuous drain current (I_D) of 22A. It has a low on-resistance (R_DS(on)), which minimizes power losses, enhancing overall efficiency. The IRF6648TRPBF also boasts fast switching speeds, which are crucial for high-frequency applications.
The transistor is housed in a TO-252 package, which provides a compact form factor while facilitating efficient heat dissipation. Its performance characteristics make it ideal for use in DC-DC converters, motor drives, and other high-power applications. The IRF6648TRPBF's reliability and efficiency contribute to its popularity in both consumer electronics and industrial applications.
Equivalent
The IRF6648TRPBF is a HEXFET power MOSFET. Equivalent products include:
1. IRF540N – Another HEXFET power MOSFET with similar voltage and current ratings.
2. STP60NF06 – A power MOSFET from STMicroelectronics with comparable specifications.
3. FQP50N06 – A Fairchild (now ON Semiconductor) MOSFET with similar characteristics.
Always verify the exact specifications and pin configurations to ensure compatibility in your specific application.
1. IRF540N – Another HEXFET power MOSFET with similar voltage and current ratings.
2. STP60NF06 – A power MOSFET from STMicroelectronics with comparable specifications.
3. FQP50N06 – A Fairchild (now ON Semiconductor) MOSFET with similar characteristics.
Always verify the exact specifications and pin configurations to ensure compatibility in your specific application.
Features
The IRF6648TRPBF is a MOSFET from Infineon Technologies, specifically designed for high-efficiency power applications. Key features include:
1. N-Channel MOSFET: It is an N-channel device, suitable for high-side and low-side switching applications.
2. Voltage and Current Ratings: It usually has a high voltage rating, often around 150V, and can handle substantial current levels, typically exceeding 30A.
3. Low On-Resistance: The device features a low on-state resistance (R_DS(on)), minimizing conduction losses and improving efficiency.
4. Fast Switching: Offers fast switching performance, which enhances efficiency in high-frequency applications.
5. TO-220 Package: Typically available in a TO-220 package, which provides good thermal performance and is suitable for mounting on heat sinks.
6. Thermal Performance: Designed to handle significant thermal stress with efficient heat dissipation.
7. Applications: Commonly used in power supply circuits, motor drives, and other applications that require efficient power management.
These features make it ideal for use in a variety of power electronic circuits that demand high performance and reliability.
1. N-Channel MOSFET: It is an N-channel device, suitable for high-side and low-side switching applications.
2. Voltage and Current Ratings: It usually has a high voltage rating, often around 150V, and can handle substantial current levels, typically exceeding 30A.
3. Low On-Resistance: The device features a low on-state resistance (R_DS(on)), minimizing conduction losses and improving efficiency.
4. Fast Switching: Offers fast switching performance, which enhances efficiency in high-frequency applications.
5. TO-220 Package: Typically available in a TO-220 package, which provides good thermal performance and is suitable for mounting on heat sinks.
6. Thermal Performance: Designed to handle significant thermal stress with efficient heat dissipation.
7. Applications: Commonly used in power supply circuits, motor drives, and other applications that require efficient power management.
These features make it ideal for use in a variety of power electronic circuits that demand high performance and reliability.
Pinout
The IRF6648TRPBF is a HEXFET power MOSFET produced by Infineon Technologies. It typically comes in a standard DPAK (TO-252) package. This specific MOSFET model often has three pins, plus the tab:
1. Gate (G): This pin is used to turn the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal where the load is connected, and current flows out of this pin when the MOSFET is on.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is on.
4. Tab/Case: Often connected internally to the drain, the tab helps in heat dissipation.
The IRF6648TRPBF is used in a variety of applications, including power management in electronic devices, due to its efficiency in switching and handling high currents.
1. Gate (G): This pin is used to turn the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal where the load is connected, and current flows out of this pin when the MOSFET is on.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is on.
4. Tab/Case: Often connected internally to the drain, the tab helps in heat dissipation.
The IRF6648TRPBF is used in a variety of applications, including power management in electronic devices, due to its efficiency in switching and handling high currents.
Manufacturer
The IRF6648TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer known for producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive systems. The company focuses on providing technology solutions for energy efficiency, mobility, and security across various industries.
Application
The IRF6648TRPBF is a power MOSFET commonly used in applications requiring efficient power management and high-speed switching. Key application areas include:
1. Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation.
2. DC-DC Converters: Supports voltage conversion in various electronic devices.
3. Motor Drives: Used in the control of brushless DC motors for improved efficiency.
4. Inverters: Applied in inverter circuits for renewable energy systems like solar inverters.
5. Load Switches: Functions as high-speed load switches in various electronic circuits.
6. LED Drivers: Employed in driving LED lighting systems for enhanced performance.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation.
2. DC-DC Converters: Supports voltage conversion in various electronic devices.
3. Motor Drives: Used in the control of brushless DC motors for improved efficiency.
4. Inverters: Applied in inverter circuits for renewable energy systems like solar inverters.
5. Load Switches: Functions as high-speed load switches in various electronic circuits.
6. LED Drivers: Employed in driving LED lighting systems for enhanced performance.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The IRF6648TRPBF comes in a D-Pak (TO-252) package, which is a surface-mount device designed for efficient heat dissipation and compact design suitable for high-power applications.
