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IRF5802TRPBF
+NomenclatureMOSFET N-CH 150V 900MA MICRO6
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FabricantTechnologie Infineon
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Pièce fabricant #IRF5802TRPBF
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En stock9306
365 Garantie qualité 24h/24
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 900mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 540mA, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6.8 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 88 pF @ 25 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro6™(TSOP-6) |
