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IRF540PBF
+NomenclatureMOSFET N-CH 100V 28A TO220AB
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FabricantSiliconix
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Pièce fabricant #IRF540PBF
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Package TO-220AB
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En stock1774
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 28A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 77mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 72 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Présentation
Description
The "PBF" suffix denotes a lead-free, RoHS-compliant package, making it suitable for environmentally friendly applications. The IRF540PBF is typically housed in a TO-220 package, which provides efficient heat dissipation. Its threshold voltage ranges from 2V to 4V, making it compatible with various gate drive voltages. Ideal for use in both commercial and industrial settings, the IRF540PBF strikes a balance between performance and cost, making it a popular choice in various electronic circuits.
Equivalent
1. STP55NF06 (by STMicroelectronics)
2. FDP6030BL (by ON Semiconductor)
3. NTE2395 (by NTE Electronics)
4. FQP30N06L (by Fairchild Semiconductor)
5. IPP50N06S3L-11 (by Infineon Technologies)
These alternatives have similar specifications and can serve as replacements, but always check the datasheets for exact compatibility with your application.
Features
1. Voltage and Current Ratings: It has a drain-to-source voltage (Vds) rating of 100V and can handle continuous drain current (Id) of up to 33A, making it suitable for high-power applications.
2. Rds(on): The device offers a low on-resistance of around 44 mΩ, which minimizes power losses and improves efficiency in switching applications.
3. Fast Switching: It provides fast switching speeds, making it ideal for high-frequency applications and reducing overall energy loss.
4. Thermal Performance: The MOSFET features efficient thermal management with a maximum power dissipation of 150W, which is enhanced by its TO-220 package.
5. Gate Threshold Voltage: It operates with a gate threshold voltage (Vgs) ranging from 2V to 4V, making it compatible with standard logic level drive.
6. Lead-Free: The "PBF" in its designation indicates that it is lead-free and RoHS compliant, adhering to environmental standards.
Overall, the IRF540PBF is commonly used in power management, motor control, and DC-DC converters due to its robust performance and reliability.
Pinout
1. Gate (G): This pin controls the MOSFET by voltage applied to it. Applying a positive voltage relative to the source will turn the MOSFET on, allowing current to flow between the drain and the source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It is one of the main current-carrying terminals.
3. Source (S): This pin is the return path for the main current flowing through the MOSFET. It is connected to ground or the negative side of the power supply in most applications.
The IRF540PBF is typically used in applications requiring high-speed switching and efficiency, such as power supplies, motor controllers, and audio amplifiers.
Manufacturer
Application
1. Switching Power Supplies: Efficiently managing power in converters and inverters.
2. Motor Control: Driving DC motors in robotics and industrial applications.
3. Audio Amplifiers: Used in Class D amplifiers for efficient audio power.
4. LED Drivers: Controlling high-power LED arrays.
5. Battery Management: Used in protection circuits and chargers.
6. Renewable Energy Systems: Implementation in solar panel inverters and wind turbines.
7. Automotive: Controlling actuators and lights in vehicles.
These diverse applications highlight its versatility in handling high-power loads in both consumer and industrial electronics.