IRF2804STRLPBF

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IRF2804STRLPBF

+Nomenclature

MOSFET N-CH 40V 75A D2PAK

  • FabricantTechnologie Infineon

  • Pièce fabricant #IRF2804STRLPBF

  • En stock4982

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Spécifications

Attribut Valeur
Supplier Infineon Technologies
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 75A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 240 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6450 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

Présentation

Description

IRF2804STRLPBF is a high‑current N‑channel MOSFET from Infineon/IR (HexFET family). It is a Pb‑free, RoHS‑compliant device in a lead‑free surface‑mount package (STR/LPBF style). It’s intended for switching power applications such as DC–DC converters, motor drivers, and bridge circuits.
Key points:
- Vds ≈ 55 V class, Id rating in tens of amperes (depends on package and cooling)
- Very low Rds(on) at suitable gate drive (typical milliohms range), with best performance at around 10 V gate drive; not guaranteed at logic-level (5 V)
- Fast switching, rugged avalanche capability, and a body diode for reverse conduction
- Package: lead-free SMD (LPBF)
Applications: switch-mode power supplies, motor controllers, inverters, high‑current switching stages.
Note: exact Rds(on), Id, Qgs/Qgd, total gate charge, and thermal specs vary with temperature and mounting. Always consult the official datasheet for precise electrical and thermal parameters for your application.

Equivalent

I can’t give precise cross-references without the datasheet. Please share the key specs: Vds, Id, Rds(on), and the package (Pb-free). With those, I’ll provide exact equivalents from Infineon/Onsemi/ST/Vishay/Mouser/DigiKey.

Features

IRF2804STRLPBF is a Pb-free, RoHS-compliant N-channel power MOSFET. Key features:
- N-channel enhancement-mode HEXFET power MOSFET
- Vds: 55 V
- Continuous drain current: tens of amperes (ratings in datasheet)
- Very low on-resistance: milliohms range (typical at Vgs ≈ 10V)
- Gate threshold: roughly 2–4 V
- Fast switching with low gate charge
- Avalanche rugged for rugged operation
- Package: STRLPBF (Pb-free) suitable for surface/through-hole mounting
- Applications: switch-mode power supplies, motor control, DC-DC converters, and other high-efficiency power electronics
Note: For exact Id, Rds(on), input capacitance, and thermal specs, consult the official datasheet.

Pinout

The IRF2804STRLPBF is a 3-pin N‑channel power MOSFET. Pin functions (typical, left→right when viewing the package front) are:
- Pin 1: Gate (G) — control terminal
- Pin 2: Drain (D) — main current input (also tied to the metal tab/heatsink)
- Pin 3: Source (S) — main current output/return
The exposed tab/heat sink is electrically connected to the Drain.

Manufacturer

Manufacturer: Infineon Technologies AG (the IRF prefix traces to International Rectifier, which Infineon acquired).
What kind of company: Infineon is a global semiconductor company based in Germany that designs and manufactures a broad range of semiconductor products and systems—especially power semiconductors (MOSFETs, IGBTs), automotive and industrial power-control ICs, microcontrollers, sensors and security solutions.

Application

IRF2804STRLPBF is an N-channel power MOSFET (55V, low Rds(on)) for high-speed switching. Common applications:
- Switch-mode power supplies (buck/boost/inverter stages)
- DC-DC converters for telecom, computing, and consumer electronics
- Motor control (DC motors, BLDC drives)
- Power inverters and UPS systems
- Solar/renewables interfaces (PV charge controllers, microinverters)
- Battery charging/discharge circuits
- Class-D audio amplifiers and other high-frequency switching loads

Package

Pb-free D2PAK (TO-263-3) surface-mount package.

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