IRF200B211

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IRF200B211

+Nomenclature

MOSFET N-CH 200V 12A TO220AB

  • FabricantTechnologie Infineon

  • Pièce fabricant #IRF200B211

  • En stock3384

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Spécifications

Attribut Valeur
Supplier Infineon Technologies
Package / Case Tube
Series HEXFET®, StrongIRFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 170mOhm @ 7.2A, 10V
Vgs(th)(Max) @ Id 4.9V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 23 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 790 pF @ 50 V
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Présentation

Description

IRF200B211 likely refers to a power MOSFET from International Rectifier (IR, now Infineon). It’s an N‑channel enhancement‑mode device used as a high‑speed switch in power electronics.
Key points:
- Purpose: switches in SMPS, DC‑DC converters, motor drives, inverters.
- What to check in the datasheet: Vds (voltage rating, e.g., around 200 V for this family), Id (continuous drain current), Rds(on) at a given Vgs (low on-resistance for efficiency), Vgs(th), total gate charge (Qg/Qgd), and package (TO‑220, D²PAK, etc.) with thermal specs.
- Driving: typically gate drive of ~10–12 V for full enhancement; ensure driver can handle the gate charge; provide adequate heat sinking and respect SOA for pulsed loads.
- How to confirm: verify exact part number and read the official datasheet from Infineon/IR, since “B211” may be a lot/date code or variant.
If you have the exact datasheet or a link, I can pull out the precise specs.

Equivalent

I don’t have a confirmed cross for “IRF200B211.” Please provide its datasheet or key specs (VDS, continuous ID, RDS(on) at a given VGS, VGS(max)/th, package and switching speed). With those I can quickly list safe equivalents (or close substitutes from Infineon, IR, Vishay, ST, etc.).

Pinout

Most IRF-series power MOSFETs including the IRF200B211 are 3-pin devices (plus a metal tab/heatsink). Typical pin functions: Pin 1 = Gate (control), Pin 2 = Drain (power input, usually tied to the metal tab), Pin 3 = Source (power output/return). Exact pin numbering and tab connection depend on the package (TO-220, DPAK, etc.), so verify the specific package pin‑out in the manufacturer’s datasheet.

Manufacturer

The IRF200B211 is an International Rectifier (IR) part; International Rectifier’s product lines and part numbering are now part of Infineon Technologies following Infineon’s 2015 acquisition.
International Rectifier (IR) was a U.S. company specializing in power semiconductors (MOSFETs, IGBTs and power-management ICs); Infineon is a global German semiconductor manufacturer focused on automotive, industrial power control, and security/IoT solutions.

Application

IRF200B211 is a high-performance power MOSFET suitable for several power-electronics roles. Typical applications include:
- Switch-mode power supplies (offline/primary and secondary DC-DC converters)
- DC-DC converters and point-of-load regulators
- Motor drives (BLDC/PMSM, servo motors) and PWM switching
- DC-AC inverters (solar, UPS, grid-tied systems)
- Automotive power electronics (load switches, power management)
- Renewable-energy interfaces and battery-management circuits
- Industrial power control and data-center power management
- General high-side/low-side switching and protection circuits
Note: confirm device specs (voltage/current) for exact suitability.

Package

I can’t confirm the exact package for IRF200B211 from my offline data. IRF200-family MOSFETs commonly come in TO‑220, TO‑247 or DPAK/TO‑263 packages. Please provide the datasheet or a link and I’ll verify the precise package.

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