IRF1310NSTRLPBF

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IRF1310NSTRLPBF

+Nomenclature

MOSFET N-CH 100V 42A D2PAK

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Spécifications

Attribut Valeur
Supplier Infineon Technologies
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 42A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 36mOhm @ 22A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1900 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

Présentation

Description

The IRF1310NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used for switching and amplifying electronic signals in various applications. It is part of the HEXFET® family, known for efficient power management, and is manufactured by Infineon Technologies.
Key features of the IRF1310NSTRLPBF include:
1. Drain-Source Voltage (Vds): Typically rated at 100V, allowing it to handle high-voltage applications.
2. Continuous Drain Current (Id): Can handle high currents, making it suitable for power-intensive applications.
3. On-Resistance (Rds(on)): Low on-resistance ensures less power loss during operation.
4. Package: Often available in a Surface-Mount Device (SMD) package, facilitating ease of integration into printed circuit boards.
5. Applications: Commonly used in power supply circuits, motor controllers, and other electronic devices requiring efficient power management.
The "PbF" suffix indicates it is lead-free, aligning with environmental regulations. Its robust design and efficiency make it a popular choice in various industrial and consumer electronics.

Equivalent

The IRF1310NSTRLPBF is a n-channel MOSFET. Equivalent products include:
1. STP80NF10 by STMicroelectronics
2. FDPF33N25 from ON Semiconductor
3. IPP90R1K0C3 by Infineon Technologies
These alternatives offer similar voltage and current ratings but always verify the specific parameters and thermal characteristics to ensure compatibility for your application.

Features

The IRF1310NSTRLPBF is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. N-Channel MOSFET: Enables efficient power control and management.
2. VDSS: Rated for a drain-source voltage of 100V, suitable for various power applications.
3. RDS(on): Low on-resistance of 55mΩ (typical) at 10V gate-source voltage, reducing conduction losses and improving efficiency.
4. ID: Can handle continuous drain current up to 44A at 25°C.
5. Thermal Performance: Enhanced thermal resistance due to its TO-263 package, allowing for effective heat dissipation.
6. Packaging: Supplied in a surface-mountable TO-263 (D2PAK) package, which is suitable for high-density designs.
7. RoHS Compliant: Environmentally friendly, meeting lead-free standards.
8. Applications: Ideal for use in DC-DC converters, motor drivers, and general-purpose switching applications.
Overall, the IRF1310NSTRLPBF is designed for reliable performance in demanding environments, offering a balance of high current capacity and low on-resistance.

Pinout

The IRF1310NSTRLPBF is a power MOSFET, specifically designed for high efficiency applications. It is part of the IRF family of N-channel MOSFETs.
In terms of pin count and function, the IRF1310NSTRLPBF typically comes in a standard D2PAK (TO-263) package, which features three pins. The three pins are designated as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the other two pins or stopping it.
2. Drain (D): This pin is where the major current flows out of the MOSFET when it is in the "on" state. It is connected to the load in the circuit.
3. Source (S): This pin serves as the return path for the current flowing through the MOSFET. It is typically connected to the ground or a negative voltage source in a circuit.
The IRF1310NSTRLPBF is widely used in switching and amplification applications due to its high efficiency and low on-state resistance.

Manufacturer

The IRF1310NSTRLPBF is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design and production of discrete semiconductors and passive electronic components. Founded in 1962, the company provides a wide range of products including MOSFETs, diodes, resistors, capacitors, inductors, and more. These components are critical in a variety of applications across numerous industries such as automotive, industrial, consumer electronics, telecommunications, and computing. Vishay is known for its emphasis on innovation and quality, making it a significant player in the electronics component market.

Application

The IRF1310NSTRLPBF is a power MOSFET used primarily in applications requiring efficient power switching and energy conversion. Key application areas include:
1. Switching Power Supplies: Used in AC-DC and DC-DC converters for efficient power management.
2. Motor Control: Suitable for controlling motors in industrial and consumer electronics.
3. Uninterruptible Power Supplies (UPS): Helps in voltage regulation and power distribution.
4. Battery Management Systems: Used in electric vehicles and portable devices for battery protection and charging.
5. Solar Inverters: Facilitates the conversion of solar power for grid or battery storage.
6. Audio Amplifiers: Utilized in Class D amplifiers for efficient audio signal amplification.
These applications benefit from its low on-resistance, fast switching speed, and high current capacity.

Package

The IRF1310NSTRLPBF is typically available in a D2PAK (TO-263) surface-mount package.

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