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IPW65R095C7
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FabricantTechnologie Infineon
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Pièce fabricant #IPW65R095C7
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En stock5674
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Spécifications
| Attribut | Valeur |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C7 |
| Factory Pack Quantity | 240 |
| Subcategory | Transistors |
| Part # Aliases | SP001080128 IPW65R095C7XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 21.1 mm |
| Length | 16.13 mm |
| Width | 5.21 mm |
| Unit Weight | 0.211644 oz |
| Package / Case | TO-247-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 24 A |
| Rds On | 84 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 45 nC |
| Pd - Power Dissipation | 128 W |
| Channel Mode | Enhancement |
| Fall Time | 7 ns |
| Rise Time | 12 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 60 ns |
| Typical Turn - On Delay Time | 14 ns |
Présentation
Description
The IPW65R095C7 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a 650V breakdown voltage and a low on-resistance of 0.095 ohms, making it suitable for switching power supplies, motor drives, and converter applications.
Key characteristics include a maximum continuous drain current of 32A and a fast switching speed, which enhances its performance in high-frequency applications. Its high thermal efficiency allows for better heat management, thereby improving overall system reliability. The device is housed in a TO-247 package, facilitating easy integration and effective heat dissipation.
The IPW65R095C7 is commonly used in applications that require high voltage and efficient power management, such as renewable energy systems, electric vehicles, and industrial power supplies. Its combination of performance, reliability, and efficiency makes it a popular choice among engineers and designers in the power electronics field.
Key characteristics include a maximum continuous drain current of 32A and a fast switching speed, which enhances its performance in high-frequency applications. Its high thermal efficiency allows for better heat management, thereby improving overall system reliability. The device is housed in a TO-247 package, facilitating easy integration and effective heat dissipation.
The IPW65R095C7 is commonly used in applications that require high voltage and efficient power management, such as renewable energy systems, electric vehicles, and industrial power supplies. Its combination of performance, reliability, and efficiency makes it a popular choice among engineers and designers in the power electronics field.
Equivalent
The IPW65R095C7 is an N-channel MOSFET with a 650V rating and a 95A continuous current capacity. Equivalent products include:
1. Infineon IRF3205PBF
2. STMicroelectronics STP75NF75
3. Vishay SIHG65N60E
Always check specific datasheets for detailed specifications, as characteristics such as RDS(on), gate charge, and thermal performance may vary.
1. Infineon IRF3205PBF
2. STMicroelectronics STP75NF75
3. Vishay SIHG65N60E
Always check specific datasheets for detailed specifications, as characteristics such as RDS(on), gate charge, and thermal performance may vary.
Features
The IPW65R095C7 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, suitable for high-voltage applications.
2. On-Resistance: The on-resistance (Rds(on)) is as low as 0.095 ohms, which minimizes conduction losses.
3. Current Rating: It can handle a continuous drain current (Id) of up to 30A, making it ideal for various power applications.
4. Switching Performance: Designed for fast switching, it enhances efficiency in applications like converters and inverters.
5. Thermal Performance: Features a high junction temperature rating and robust thermal stability, suitable for demanding environments.
6. Package Type: Offered in a TO-247 package, which facilitates efficient heat dissipation.
These features make the IPW65R095C7 suitable for applications such as power supplies, motor drives, and renewable energy systems.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, suitable for high-voltage applications.
2. On-Resistance: The on-resistance (Rds(on)) is as low as 0.095 ohms, which minimizes conduction losses.
3. Current Rating: It can handle a continuous drain current (Id) of up to 30A, making it ideal for various power applications.
4. Switching Performance: Designed for fast switching, it enhances efficiency in applications like converters and inverters.
5. Thermal Performance: Features a high junction temperature rating and robust thermal stability, suitable for demanding environments.
6. Package Type: Offered in a TO-247 package, which facilitates efficient heat dissipation.
These features make the IPW65R095C7 suitable for applications such as power supplies, motor drives, and renewable energy systems.
Pinout
The IPW65R095C7 is an N-channel MOSFET with a pin count of six. It is part of the CoolMOS series, designed for high efficiency in power applications.
The pin functions are as follows:
1. Gate (G): Controls the flow of current through the MOSFET allowing it to switch on and off.
2. Drain (D): The output terminal where the current flows out of the device.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode (internal): Provides a path for reverse current, allowing for operation in synchronous rectification.
The MOSFET is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 95A, making it suitable for high-voltage power conversion applications. Its low on-resistance and high efficiency contribute to reduced energy losses.
The pin functions are as follows:
1. Gate (G): Controls the flow of current through the MOSFET allowing it to switch on and off.
2. Drain (D): The output terminal where the current flows out of the device.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode (internal): Provides a path for reverse current, allowing for operation in synchronous rectification.
The MOSFET is rated for a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 95A, making it suitable for high-voltage power conversion applications. Its low on-resistance and high efficiency contribute to reduced energy losses.
Manufacturer
The IPW65R095C7 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor solutions for various applications, including automotive, industrial power control, and digital security.
Infineon is particularly known for its expertise in power semiconductors, enabling efficient energy management and conversion. The IPW65R095C7 is a part of their family of IGBT (Insulated Gate Bipolar Transistor) modules, which are used in applications such as motor drives, renewable energy systems, and power supply devices.
As a leading player in the semiconductor industry, Infineon focuses on innovation and sustainability, contributing to advancements in technology and energy efficiency across multiple sectors.
Infineon is particularly known for its expertise in power semiconductors, enabling efficient energy management and conversion. The IPW65R095C7 is a part of their family of IGBT (Insulated Gate Bipolar Transistor) modules, which are used in applications such as motor drives, renewable energy systems, and power supply devices.
As a leading player in the semiconductor industry, Infineon focuses on innovation and sustainability, contributing to advancements in technology and energy efficiency across multiple sectors.
Application
The IPW65R095C7 is a N-channel MOSFET designed for high-performance applications. Its key application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for driving electric motors in industrial automation and electric vehicles.
3. DC-DC Converters: Employed in various converter designs for renewable energy systems.
4. Inverters: Utilized in photovoltaic and industrial inverters for energy conversion.
5. Lighting Control: Applicable in LED drivers and dimmers for effective lighting management.
Its high voltage and current ratings make it ideal for demanding power applications.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for driving electric motors in industrial automation and electric vehicles.
3. DC-DC Converters: Employed in various converter designs for renewable energy systems.
4. Inverters: Utilized in photovoltaic and industrial inverters for energy conversion.
5. Lighting Control: Applicable in LED drivers and dimmers for effective lighting management.
Its high voltage and current ratings make it ideal for demanding power applications.
Package
The IPW65R095C7 is packaged in a TO-247 format. This package type is designed for high-power applications, offering good thermal performance and ease of mounting on heatsinks.
