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IPP020N08N5
+Nomenclature-
FabricantTechnologie Infineon
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Pièce fabricant #IPP020N08N5
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Package TO-220-3
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En stock5091
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Spécifications
| Attribut | Valeur |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | OptiMOS 5 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SP001132480 IPP020N08N5AKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 2 g |
| Configuration | Single |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 80 V |
| Id - Continuous Drain Current | 120 A |
| Rds On | 1.8 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.2 V |
| Qg - Gate Charge | 223 nC |
| Pd - Power Dissipation | 375 W |
| Channel Mode | Enhancement |
| Fall Time | 37 ns |
| Rise Time | 36 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 102 ns |
| Typical Turn - On Delay Time | 40 ns |
| REACH - SVHC | Details |
| Forward Transconductance - Min | 114 S |
| Package / Case | TO-220-3 |
| Product | MOSFETs |
| Type | Power MOSFET |
Présentation
Description
IPP020N08N5 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management. It has a voltage rating of 80V and a current rating of 20A, making it suitable for medium to high-power applications such as switching power supplies, motor control, and automotive systems.
This device features low on-resistance, enabling efficient power conversion and reduced heat generation during operation. The high-speed switching capability allows for rapid turn-on and turn-off, which is critical in applications requiring fast response times.
The IPP020N08N5 typically comes in a TO-220 package, facilitating heat dissipation and ease of mounting on PCB. It is essential to follow the manufacturer's specifications for optimal performance and reliability.
In summary, the IPP020N08N5 is a versatile and efficient MOSFET ideal for applications requiring robust power handling and efficient switching characteristics.
This device features low on-resistance, enabling efficient power conversion and reduced heat generation during operation. The high-speed switching capability allows for rapid turn-on and turn-off, which is critical in applications requiring fast response times.
The IPP020N08N5 typically comes in a TO-220 package, facilitating heat dissipation and ease of mounting on PCB. It is essential to follow the manufacturer's specifications for optimal performance and reliability.
In summary, the IPP020N08N5 is a versatile and efficient MOSFET ideal for applications requiring robust power handling and efficient switching characteristics.
Equivalent
Equivalent products to the IPP020N08N5 chip include the STP20NM60, IRF3205, and FQP30N06L. These alternatives share similar voltage ratings, current capacities, and switching characteristics suitable for applications in power electronics. Always verify specific parameters to ensure compatibility for your particular use case.
Features
The IPP020N08N5 is a N-channel MOSFET designed for use in power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 80V.
2. Current Rating: The maximum continuous drain current (I_D) is 20A.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for low-voltage drive capability.
5. Package Type: It typically comes in a TO-220 package, facilitating heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, making it suitable for converters and inverters.
7. Robustness: Offers high avalanche ratings, enhancing reliability in transient conditions.
These features make the IPP020N08N5 ideal for applications such as power supplies, motor drivers, and other high-efficiency circuits.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 80V.
2. Current Rating: The maximum continuous drain current (I_D) is 20A.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 10 mΩ, ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for low-voltage drive capability.
5. Package Type: It typically comes in a TO-220 package, facilitating heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, making it suitable for converters and inverters.
7. Robustness: Offers high avalanche ratings, enhancing reliability in transient conditions.
These features make the IPP020N08N5 ideal for applications such as power supplies, motor drivers, and other high-efficiency circuits.
Pinout
The IPP020N08N5 is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This terminal is used to control the MOSFET. A voltage applied to the gate allows the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is turned on. It connects to the load or the power supply.
3. Source (S): This terminal is where the current enters the MOSFET. It is typically connected to ground or the negative side of the power supply.
The IPP020N08N5 is designed for high efficiency and can handle a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 20A, making it suitable for various applications, including power management and motor control.
1. Gate (G): This terminal is used to control the MOSFET. A voltage applied to the gate allows the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is turned on. It connects to the load or the power supply.
3. Source (S): This terminal is where the current enters the MOSFET. It is typically connected to ground or the negative side of the power supply.
The IPP020N08N5 is designed for high efficiency and can handle a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 20A, making it suitable for various applications, including power management and motor control.
Manufacturer
The IPP020N08N5 is manufactured by Infineon Technologies AG. Infineon is a global technology company based in Germany that specializes in semiconductor solutions and systems. Established in 1999 as a spin-off from Siemens AG, Infineon operates in various sectors, including automotive, industrial power control, and security technologies.
The IPP020N08N5 is a power MOSFET, specifically designed for applications in power management and energy efficiency. Infineon focuses on developing innovative and high-performance semiconductor products that enhance energy efficiency and drive advancements in the automotive and industrial sectors.
As a prominent player in the semiconductor industry, Infineon is committed to sustainability and offers solutions that support renewable energy and electric mobility. The company's extensive portfolio includes products like microcontrollers, sensors, and power semiconductors, aimed at addressing the growing demand for smart technologies and sustainable solutions across various markets.
The IPP020N08N5 is a power MOSFET, specifically designed for applications in power management and energy efficiency. Infineon focuses on developing innovative and high-performance semiconductor products that enhance energy efficiency and drive advancements in the automotive and industrial sectors.
As a prominent player in the semiconductor industry, Infineon is committed to sustainability and offers solutions that support renewable energy and electric mobility. The company's extensive portfolio includes products like microcontrollers, sensors, and power semiconductors, aimed at addressing the growing demand for smart technologies and sustainable solutions across various markets.
Application
The IPP020N08N5 is a N-channel MOSFET designed for high-efficiency applications. Its key application areas include:
1. Power Supply: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for applications in robotics and automation.
3. DC-DC Converters: Utilized in buck or boost converters for power management.
4. LED Drivers: Applied in driving LEDs in lighting solutions.
5. Telecom Equipment: Used for power amplification and signal switching in communication systems.
Its low on-resistance and high current handling make it suitable for these applications.
1. Power Supply: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in motor drivers for applications in robotics and automation.
3. DC-DC Converters: Utilized in buck or boost converters for power management.
4. LED Drivers: Applied in driving LEDs in lighting solutions.
5. Telecom Equipment: Used for power amplification and signal switching in communication systems.
Its low on-resistance and high current handling make it suitable for these applications.
Package
The IPP020N08N5 is typically available in a TO-220 package type. This package offers good thermal performance and is commonly used for power MOSFETs in various applications.
