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IPL60R065P7
+NomenclatureMOSFETs HIGH POWER_NEW
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FabricantTechnologie Infineon
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Pièce fabricant #IPL60R065P7
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Fiche technique IPL60R065P7 DataSheet
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En stock16034
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Spécifications
| Attribut | Valeur |
| Packaging | Reel |
Présentation
Description
Key features of the IPL60R065P7 include a breakdown voltage of 600V, a low on-state resistance (R_DS(on)) of 65 milliohms, and a fast switching capability. These attributes contribute to reduced energy losses and improved thermal performance. The P7 series enhances the balance between conduction and switching losses, making it suitable for hard- and soft-switching topologies.
The transistor is available in a TO-220 FullPAK package, which provides good thermal conduction and mounting flexibility. Overall, the IPL60R065P7 is designed to offer energy efficiency, reliability, and cost-effectiveness in power management applications.
Equivalent
1. STMicroelectronics: STP60N65M5 - 650V MDmesh V Power MOSFET.
2. ON Semiconductor: NTP65N065SC1 - 650V SuperFET II MOSFET.
3. Vishay: SiHP65N65E - 650V E Series Power MOSFET.
These alternatives should be checked for specific application requirements to ensure compatibility.
Features
1. Voltage and Current Rating: It typically has a drain-source voltage (V_DS) of 600V and a drain current (I_D) of around 60A.
2. R_DS(on): The on-resistance is approximately 65 milliohms, which contributes to reduced conduction losses and improved efficiency.
3. Technology: It is built using Infineon's CoolMOS™ P7 technology, which enhances efficiency and minimizes power loss.
4. Switching Performance: The device provides fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: It is designed with a low thermal resistance, which helps in effective heat dissipation and improves reliability.
6. Applications: Commonly used in power supply units, renewable energy systems, motor drives, and other high-efficiency power conversion applications.
7. Package: It is available in various package options, such as TO-220, to suit different design requirements.
These features make the IPL60R065P7 a suitable choice for engineers looking for high-performance, energy-efficient solutions in power electronics.
Pinout
1. Gate (G): This pin is used to control the transistor. Applying a voltage to this gate pin allows current to flow between the drain and source.
2. Drain (D): This is where the current enters the MOSFET. The drain is one of the main terminals for the current flow when the MOSFET is in the ON state.
3. Source (S): This is where the current exits the MOSFET. It completes the circuit with the drain when the device is active.
These pins facilitate the control of high voltages and currents in various applications, making the IPL60R065P7 suitable for efficient power management solutions.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Enhances efficiency in AC/DC converters.
2. Telecommunications: Supports power regulation and distribution.
3. Server and Data Centers: Optimizes power usage in high-density environments.
4. Industrial Power Supplies: Provides robust solutions for industrial automation and control systems.
5. Motor Drives: Offers efficient switching for motor control applications.
Its low on-resistance and high efficiency make it suitable for high-frequency applications requiring fast switching and low power losses.