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IPG20N04S412AATMA1
+NomenclatureMOSFET 2N-CH 40V 20A 8TDSON
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FabricantTechnologie Infineon
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Pièce fabricant #IPG20N04S412AATMA1
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Fiche technique IPG20N04S412AATMA1 DataSheet
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Package VDFN-8
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En stock20559
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Spécifications
| Attribut | Valeur |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain(Id) @ 25°C | 20A |
| Rds On(Max) @ Id Vgs | 12.2mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 15µA |
| Gate Charge(Qg)(Max) @ Vgs | 18nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1470pF @ 25V |
| Power - Max | 41W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
Présentation
Description
The IPG20N04S4-12AATMA1 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is part of the OptiMOS series, which is designed for high-performance applications. This particular MOSFET is known for its low on-state resistance, which helps in enhancing efficiency and reducing power loss. The IPG20N04S4 is typically used in applications such as power management, automotive systems, and other electronic devices requiring efficient switching performance.
Key features of the IPG20N04S4-12AATMA1 include low gate charge, fast switching capabilities, and high current carrying capacity, making it suitable for high-frequency applications. It is also designed to handle high temperatures and provide robust performance under demanding conditions. The component is often used in applications where high efficiency and reliability are critical, such as DC-DC converters, motor controls, and load switches. Its compact design and efficiency make it a popular choice in modern electronic circuit designs.
Key features of the IPG20N04S4-12AATMA1 include low gate charge, fast switching capabilities, and high current carrying capacity, making it suitable for high-frequency applications. It is also designed to handle high temperatures and provide robust performance under demanding conditions. The component is often used in applications where high efficiency and reliability are critical, such as DC-DC converters, motor controls, and load switches. Its compact design and efficiency make it a popular choice in modern electronic circuit designs.
Equivalent
The IPG20N04S412AATMA1 is a N-channel MOSFET from Infineon. Equivalent products include:
1. STMicroelectronics: STP60NF06.
2. Vishay: SiHP20N60E-GE3.
3. ON Semiconductor: FDP047AN08A0.
4. NXP Semiconductors: BUK954R8-60E.
Ensure compatibility by checking parameters like voltage, current ratings, Rds(on), and package type before substituting.
1. STMicroelectronics: STP60NF06.
2. Vishay: SiHP20N60E-GE3.
3. ON Semiconductor: FDP047AN08A0.
4. NXP Semiconductors: BUK954R8-60E.
Ensure compatibility by checking parameters like voltage, current ratings, Rds(on), and package type before substituting.
Features
The IPG20N04S4-12A is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. Here are its key features:
1. Voltage and Current: It is designed to handle a maximum drain-source voltage (V_DS) of 40V and a continuous drain current of up to 20A.
2. R_DS(on): The device has a low on-state resistance, which minimizes power loss and heat generation. This is crucial for efficiency in power conversion applications.
3. Technology: It utilizes Infineon’s OptiMOS™ technology, which enhances performance in terms of speed, efficiency, and reliability.
4. Package: Available in various packages, one of the common ones is the TO-220 package, which provides good thermal performance.
5. Applications: Ideal for use in DC-DC converters, power management applications, and other electronic circuits requiring efficient power switching.
6. Thermal Management: Designed to provide good thermal performance, allowing it to operate effectively in high-power environments.
Such features make the IPG20N04S4-12A suitable for a wide range of applications in the automotive and industrial sectors.
1. Voltage and Current: It is designed to handle a maximum drain-source voltage (V_DS) of 40V and a continuous drain current of up to 20A.
2. R_DS(on): The device has a low on-state resistance, which minimizes power loss and heat generation. This is crucial for efficiency in power conversion applications.
3. Technology: It utilizes Infineon’s OptiMOS™ technology, which enhances performance in terms of speed, efficiency, and reliability.
4. Package: Available in various packages, one of the common ones is the TO-220 package, which provides good thermal performance.
5. Applications: Ideal for use in DC-DC converters, power management applications, and other electronic circuits requiring efficient power switching.
6. Thermal Management: Designed to provide good thermal performance, allowing it to operate effectively in high-power environments.
Such features make the IPG20N04S4-12A suitable for a wide range of applications in the automotive and industrial sectors.
Pinout
The IPG20N04S4-12A (Infineon part number IPG20N04S412AATMA1) is a power MOSFET. It comes in a TO-252-3 package, which typically has 3 pins. These MOSFETs are commonly used in power management applications due to their efficiency and reliability.
The pin configuration for this type of package generally includes:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal where the load is connected. It's the point of exit for the current flowing through the MOSFET when it's on.
3. Source (S): This is the terminal connected to the ground or negative supply voltage. It serves as the return path for the current flowing through the drain.
Please refer to the official datasheet of the specific MOSFET for the precise pin assignments and detailed characteristics.
The pin configuration for this type of package generally includes:
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): This is the terminal where the load is connected. It's the point of exit for the current flowing through the MOSFET when it's on.
3. Source (S): This is the terminal connected to the ground or negative supply voltage. It serves as the return path for the current flowing through the drain.
Please refer to the official datasheet of the specific MOSFET for the precise pin assignments and detailed characteristics.
Manufacturer
The IPG20N04S4-12A is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components and systems. The company is known for producing products that serve various markets, including automotive, industrial power control, power management, digital security solutions, and Internet of Things (IoT) applications. Infineon focuses on innovation and sustainability, aiming to provide efficient energy management and increased security in electronic devices. The firm is one of the leading players in the semiconductor industry and has a global presence, supplying components that are critical to the functioning of electronic systems worldwide.
Application
The IPG20N04S4-12AATMA1 is a N-channel MOSFET from Infineon Technologies, typically used in power management applications. Its key application areas include:
1. Automotive Systems: Used in electric and hybrid vehicles for battery management and motor control.
2. Power Supplies: Suitable for DC-DC converters and power supply units in consumer electronics.
3. Industrial Equipment: Applied in motor drives and industrial automation systems.
4. Telecommunications: Used in base stations and network infrastructure for efficient power delivery.
5. Consumer Electronics: Integrated into devices requiring efficient power switching, such as laptops and gaming consoles.
Its low on-resistance and high current capability make it ideal for these applications.
1. Automotive Systems: Used in electric and hybrid vehicles for battery management and motor control.
2. Power Supplies: Suitable for DC-DC converters and power supply units in consumer electronics.
3. Industrial Equipment: Applied in motor drives and industrial automation systems.
4. Telecommunications: Used in base stations and network infrastructure for efficient power delivery.
5. Consumer Electronics: Integrated into devices requiring efficient power switching, such as laptops and gaming consoles.
Its low on-resistance and high current capability make it ideal for these applications.
Package
The IPG20N04S4-12AATMA1 is a MOSFET by Infineon Technologies, and it comes in a PG-TDSON-8 package type. This package is designed for efficient thermal performance and compact size, suitable for high-density applications.
