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IPD70R600P7S
+NomenclatureMOSFETs CONSUMER
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FabricantInfineon / ir
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Pièce fabricant #IPD70R600P7S
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Fiche technique IPD70R600P7S DataSheet
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En stock13379
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Spécifications
| Attribut | Valeur |
| Packaging | Reel |
Présentation
Description
Key features of the IPD70R600P7S include a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating that varies based on the package and thermal conditions. Its low R_DS(on) minimizes conduction losses, enhancing overall efficiency.
The device is typically housed in a TO-220 or TO-252 package, which provides good thermal performance and ease of mounting. The IPD70R600P7S is optimized for applications requiring high power density and reliability, such as industrial power management, renewable energy systems, and automotive applications.
Overall, the IPD70R600P7S offers a balance of performance and efficiency, making it a versatile choice for designers seeking to optimize power delivery and reduce energy losses.
Equivalent
1. STMicroelectronics' STL25N60M2
2. ON Semiconductor's NTP60N06
3. Vishay's SiHG60N60E
Always check the datasheets for precise matching of electrical characteristics and package compatibility before substituting.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 700V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is typically around 9.8A.
3. On-Resistance: It features low on-resistance (R_DS(on)) of approximately 0.6Ω, minimizing conduction losses.
4. Package: It is available in a TO-252 (DPAK) package, which is compact and provides efficient heat dissipation.
5. Gate Charge: The device exhibits low gate charge characteristics, improving switching efficiency and reducing power consumption.
6. Technology: Built on Infineon's advanced thin wafer technology, enhancing performance and reliability.
7. Applications: Ideal for use in applications like industrial power supplies, lighting, and motor control where efficiency and reliability are crucial.
These features make the IPD70R600P7S a versatile and efficient choice for various power management applications.
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET by applying a voltage, which allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the load. It is usually connected to the high-voltage side in applications.
3. Source (S): The source is the terminal through which the current exits the MOSFET. It is typically connected to the ground or return path in the circuit.
Additionally, the metal tab on the package is often connected internally to the drain and can be used for heat dissipation. This MOSFET is designed for optimized performance in terms of efficiency, cost-effectiveness, and reliability in various power conversion applications.