Images à titre indicatif uniquement
IPD70N10S3L-12
+NomenclatureMOSFETs N-Ch 100V 70A DPAK-2 OptiMOS-T
-
FabricantTechnologie Infineon
-
Pièce fabricant #IPD70N10S3L-12
-
Fiche technique IPD70N10S3L-12 DataSheet
-
En stock16046
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Présentation
Description
The IPD70N10S3L-12 is a part of the Infineon OptiMOS™ 3 family, designed for power applications. It is a N-channel MOSFET, which is suitable for various power conversion applications due to its low on-state resistance and high-speed switching capabilities. This MOSFET is typically used in automotive powertrain systems, power supplies, and DC-DC converters.
Key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 70A, making it robust for high-power requirements. The IPD70N10S3L-12 features a low R_DS(on) value, which minimizes power losses, and is optimized for reduced gate charge, improving efficiency in high-frequency applications.
This component is housed in a TO-252 package, which is compact and suitable for surface-mount designs, enhancing thermal performance. Overall, the IPD70N10S3L-12 offers a balance of efficiency, performance, and reliability, making it a preferred choice for engineers designing power electronic systems.
Key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 70A, making it robust for high-power requirements. The IPD70N10S3L-12 features a low R_DS(on) value, which minimizes power losses, and is optimized for reduced gate charge, improving efficiency in high-frequency applications.
This component is housed in a TO-252 package, which is compact and suitable for surface-mount designs, enhancing thermal performance. Overall, the IPD70N10S3L-12 offers a balance of efficiency, performance, and reliability, making it a preferred choice for engineers designing power electronic systems.
Equivalent
The IPD70N10S3L-12 is an N-channel MOSFET manufactured by Infineon. Equivalent products from other manufacturers may include:
1. IRF540N by International Rectifier/Infineon
2. FQP30N06L by ON Semiconductor
3. STP55NF06 by STMicroelectronics
4. NTD4906N by ON Semiconductor
Always check the datasheet for exact specifications to ensure compatibility.
1. IRF540N by International Rectifier/Infineon
2. FQP30N06L by ON Semiconductor
3. STP55NF06 by STMicroelectronics
4. NTD4906N by ON Semiconductor
Always check the datasheet for exact specifications to ensure compatibility.
Features
The IPD70N10S3L-12 is a Power MOSFET, specifically designed for applications requiring high efficiency and reliability. Key features include:
1. Voltage Rating: It supports a drain-source voltage (V_ds) of 100V, making it suitable for medium to high voltage applications.
2. Current Capacity: The MOSFET can handle a continuous drain current (I_d) of up to 70A, providing robust performance for high power applications.
3. R_DS(on): It has a low on-resistance, typically around 12 mΩ, which enhances efficiency by reducing power losses during conduction.
4. Package: The MOSFET is housed in a TO-252 package, which is a surface-mount device, facilitating efficient thermal management and space-saving on printed circuit boards.
5. Technology: It utilizes trench technology, which optimizes the structure for lower on-resistance and improved switching performance.
6. Thermal Performance: It offers excellent thermal characteristics, supporting high power applications without the need for extensive cooling solutions.
This combination of features makes the IPD70N10S3L-12 ideal for use in applications like power supplies, motor drives, and DC-DC converters.
1. Voltage Rating: It supports a drain-source voltage (V_ds) of 100V, making it suitable for medium to high voltage applications.
2. Current Capacity: The MOSFET can handle a continuous drain current (I_d) of up to 70A, providing robust performance for high power applications.
3. R_DS(on): It has a low on-resistance, typically around 12 mΩ, which enhances efficiency by reducing power losses during conduction.
4. Package: The MOSFET is housed in a TO-252 package, which is a surface-mount device, facilitating efficient thermal management and space-saving on printed circuit boards.
5. Technology: It utilizes trench technology, which optimizes the structure for lower on-resistance and improved switching performance.
6. Thermal Performance: It offers excellent thermal characteristics, supporting high power applications without the need for extensive cooling solutions.
This combination of features makes the IPD70N10S3L-12 ideal for use in applications like power supplies, motor drives, and DC-DC converters.
Pinout
The IPD70N10S3L-12 is a N-channel MOSFET manufactured by Infineon Technologies. It is commonly used in power management applications such as power supplies, DC-DC converters, and motor control. The MOSFET comes in a TO-252 (DPAK) package and typically has three pins:
1. Drain (D): The drain is the main terminal through which the output current flows. It is connected to the load in the circuit.
2. Source (S): The source is the terminal through which the input current enters the MOSFET. It is usually connected to ground in many applications.
3. Gate (G): The gate is the terminal used to control the MOSFET's switching state. By applying a voltage to the gate, the MOSFET can be turned on or off, thus controlling the current flow between the drain and the source.
This MOSFET is known for its low on-resistance and efficient switching capabilities, making it suitable for high-efficiency power applications.
1. Drain (D): The drain is the main terminal through which the output current flows. It is connected to the load in the circuit.
2. Source (S): The source is the terminal through which the input current enters the MOSFET. It is usually connected to ground in many applications.
3. Gate (G): The gate is the terminal used to control the MOSFET's switching state. By applying a voltage to the gate, the MOSFET can be turned on or off, thus controlling the current flow between the drain and the source.
This MOSFET is known for its low on-resistance and efficient switching capabilities, making it suitable for high-efficiency power applications.
Manufacturer
The IPD70N10S3L-12 is manufactured by Infineon Technologies. Infineon is a leading global semiconductor company that designs, manufactures, and supplies a broad range of semiconductor solutions. These solutions are used in various applications, including automotive, industrial power control, power management, digital security, and IoT (Internet of Things) systems. Infineon is recognized for its innovation and expertise in power semiconductors, microcontrollers, sensors, and security devices. The company plays a significant role in advancing automotive electronics, renewable energy technologies, and smart infrastructure, contributing to energy efficiency and security.
Application
The IPD70N10S3L-12 is a N-channel MOSFET commonly used in applications that require efficient switching and power management. Key application areas include:
1. Power Supplies: Utilized in DC-DC converters and power management circuits due to its low on-resistance and fast switching capabilities.
2. Motor Control: Suitable for driving motors in automotive and industrial applications, providing efficient control and reduced power loss.
3. LED Drivers: Used in LED lighting systems for efficient current regulation and control.
4. Battery Management: Applied in battery protection and management systems, ensuring efficient charge and discharge cycles.
5. Load Switches: Serves in switching applications for various electronic loads, enhancing system reliability and efficiency.
1. Power Supplies: Utilized in DC-DC converters and power management circuits due to its low on-resistance and fast switching capabilities.
2. Motor Control: Suitable for driving motors in automotive and industrial applications, providing efficient control and reduced power loss.
3. LED Drivers: Used in LED lighting systems for efficient current regulation and control.
4. Battery Management: Applied in battery protection and management systems, ensuring efficient charge and discharge cycles.
5. Load Switches: Serves in switching applications for various electronic loads, enhancing system reliability and efficiency.
Package
The IPD70N10S3L-12 is a MOSFET that comes in a DPAK (TO-252) package. This package type is commonly used for surface-mount applications, providing a compact and efficient form for electronic components on printed circuit boards.
