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IPD65R660CFD
+NomenclatureIPD65R660 - 650V AND 700V COOLMO
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FabricantTechnologie Infineon
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Pièce fabricant #IPD65R660CFD
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En stock7358
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Series | CoolMOS™ CFD2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 660mOhm @ 2.1A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 200µA |
| Gate Charge(Qg)(Max) @ Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 615 pF @ 100 V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
Présentation
Description
IPD65R660CFD is an Infineon IPD (Intelligent Power Device) high‑voltage N‑channel MOSFET. It targets switching power electronics such as power supplies, motor drives, solar inverters, and automotive applications.
Key specs (approximate from the part code; check the datasheet for exact values):
- Vds: ~650 V
- Rds(on): ~0.66 Ω (indicated by the “R660” in the part name)
- Id: tens of amps class (depends on package and thermal conditions)
- Package: CFD (power SMT package, suitable for heatsinking)
Features:
- Fast-switching N‑channel MOSFET with integrated body diode
- Rugged avalanche and thermal performance for high‑loss switching
Note: Always consult the official datasheet for guaranteed electrical characteristics, thermal data, safe operating area, and packaging details, and ensure proper heatsinking and gate drive levels for your design.
Key specs (approximate from the part code; check the datasheet for exact values):
- Vds: ~650 V
- Rds(on): ~0.66 Ω (indicated by the “R660” in the part name)
- Id: tens of amps class (depends on package and thermal conditions)
- Package: CFD (power SMT package, suitable for heatsinking)
Features:
- Fast-switching N‑channel MOSFET with integrated body diode
- Rugged avalanche and thermal performance for high‑loss switching
Note: Always consult the official datasheet for guaranteed electrical characteristics, thermal data, safe operating area, and packaging details, and ensure proper heatsinking and gate drive levels for your design.
Equivalent
Do you mean the Infineon IPD65R660CFD (650 V, ~0.66 Ω N‑channel MOSFET)? I need to confirm package and key specs (Vds, Rds(on), Id, Vgs(th), switching/Qg) to give accurate equivalents. If yes, I can list direct cross‑references from Infineon, ST, Rohm, Vishay and ON Semiconductor. Which parameters matter most for your application (switching speed, thermal, package)?
Features
IPD65R660CFD is Infineon’s Intelligent Power Device (IPD) that integrates a high-voltage switching element with an on-board gate driver and protection features in one package. Key features typically include:
- Integrated power switch and gate drive in a single device for simplified gate control
- Protection: undervoltage lockout (UVLO), overcurrent/short-circuit protection (often with current limit and latch), and overtemperature/thermal shutdown
- Fault/Status signaling to monitor and diagnose in the system
- High dv/dt immunity and fast switching for efficient operation and reduced EMI
- Automotive-grade options and wide temperature ranges available
- Reduced BOM, smaller footprint, and simplified board layout
- Suitable for motor drives, inverters, and power-supply applications
Note: exact electrical ratings (voltage, current, packaging) vary by revision. For precise specs, please reference the official datasheet or share the specific requirements you need.
- Integrated power switch and gate drive in a single device for simplified gate control
- Protection: undervoltage lockout (UVLO), overcurrent/short-circuit protection (often with current limit and latch), and overtemperature/thermal shutdown
- Fault/Status signaling to monitor and diagnose in the system
- High dv/dt immunity and fast switching for efficient operation and reduced EMI
- Automotive-grade options and wide temperature ranges available
- Reduced BOM, smaller footprint, and simplified board layout
- Suitable for motor drives, inverters, and power-supply applications
Note: exact electrical ratings (voltage, current, packaging) vary by revision. For precise specs, please reference the official datasheet or share the specific requirements you need.
Manufacturer
The IPD65R660CFD is manufactured by Infineon Technologies AG. Infineon is a German multinational semiconductor company that designs and manufactures chips and power-semiconductor products for automotive, industrial, and consumer applications (power management, microcontrollers, sensors and security ICs).
Application
IPD65R660CFD is a high-current, high-voltage intelligent power device (IGBT with diode) module. Common application areas include:
- 3-phase motor drives for industrial, HVAC, pumps, and conveyors
- Solar photovoltaic inverters and energy-storage inverter stages
- Uninterruptible Power Supplies (UPS), active front-end power conditioning
- Switch-mode power supplies and DC-DC converters for data centers, telecom, and consumer electronics
- Welding machines and induction heating/processing equipment
- Industrial automation and robotics drive circuits
These modules are used wherever efficient high-power switching and fast diode recovery are needed.
- 3-phase motor drives for industrial, HVAC, pumps, and conveyors
- Solar photovoltaic inverters and energy-storage inverter stages
- Uninterruptible Power Supplies (UPS), active front-end power conditioning
- Switch-mode power supplies and DC-DC converters for data centers, telecom, and consumer electronics
- Welding machines and induction heating/processing equipment
- Industrial automation and robotics drive circuits
These modules are used wherever efficient high-power switching and fast diode recovery are needed.
Package
CFD package. It’s Infineon’s CFD surface-mount power package for the IPD65R660CFD device.
