IPD65R190C7

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IPD65R190C7

+Nomenclature

MOSFETs HIGH POWER_NEW

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Standard Pack Qty 2500

Présentation

Description

The IPD65R190C7 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. This component is part of the CoolMOS™ C7 series, known for its high efficiency and low power loss, making it suitable for use in high-performance power conversion applications. The "65" in its name indicates a voltage rating of 650 volts, while "R190" indicates its specific on-state resistance characteristics.
Key features of the IPD65R190C7 include its optimized design for high-speed switching, which contributes to reduced switching losses. This makes it particularly suitable for applications such as power supplies, adapters, and lighting systems where efficiency is critical. Additionally, the C7 series offers robust thermal performance, helping to maintain reliability under high-temperature conditions.
The IPD65R190C7's design allows for smaller system size and reduced component count in end applications, which can lead to cost savings. As such, it is a popular choice for engineers looking to improve the performance and efficiency of their electronic designs.

Equivalent

The IPD65R190C7 is a power MOSFET from Infineon Technologies. Equivalent products could include MOSFETs with similar specifications from other manufacturers. Some possible equivalents are:
1. STMicroelectronics' STF22NM60N
2. ON Semiconductor's NTP65N06R
3. Vishay Siliconix's SIHP65N60E-GE3
4. Nexperia's PSMN065-60YS
Ensure the substitutes match the key parameters such as voltage rating, current capacity, and Rds(on). Always verify datasheets to confirm compatibility.

Features

The IPD65R190C7 is a power MOSFET from Infineon's OptiMOS™ series, designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It typically offers a breakdown voltage of around 650V and a continuous drain current of up to 27A, though these values can vary slightly depending on specific device variants and operating conditions.
2. RDS(on) Resistance: It is known for its low on-state resistance (RDS(on)), around 0.19 ohms, which contributes to reduced conduction losses.
3. Technology: Utilizes advanced superjunction technology, providing improved efficiency and thermal performance compared to traditional MOSFETs.
4. Efficiency: Designed for high-speed switching applications, reducing switching losses and improving energy efficiency.
5. Thermal Management: Features enhanced thermal performance, allowing it to handle high power levels with minimal heat generation.
6. Applications: Commonly used in SMPS (Switched Mode Power Supplies), solar inverters, and other high-efficiency power conversion systems.
7. Package: Available in several package types, often in TO-252 or TO-220, ensuring versatility for different design requirements.

Pinout

The IPD65R190C7 is a power MOSFET from Infineon's CoolMOS™ C7 series, designed for high-efficiency power conversion applications. This device is typically available in a TO-252 (DPAK) package, which has three pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): This is the main terminal for current flow when the MOSFET is turned on.
3. Source (S): This terminal is connected to the ground or return path of the circuit and completes the circuit when the MOSFET is conducting.
The IPD65R190C7 is optimized for high-speed switching and efficiency, making it suitable for use in power supplies, converters, and other power management applications.

Manufacturer

The IPD65R190C7 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that develops a range of semiconductor solutions for various applications. The company focuses on microelectronics, providing products for automotive, industrial power control, power management, and digital security solutions. Infineon's products are used in improving energy efficiency, mobility, and security.

Application

The IPD65R190C7 is a power MOSFET commonly used in applications requiring efficient power management and high-speed switching. Key application areas include:
1. Switched-Mode Power Supplies (SMPS): Used in adapters, chargers, and power supply units for its high efficiency and fast switching capabilities.
2. DC-DC Converters: Ideal for buck, boost, and other converter topologies in various electronic devices.
3. Motor Drivers: Employed in controlling motors in industrial and consumer applications due to its robustness.
4. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for efficient energy conversion.
5. Lighting: Applied in LED drivers and ballast circuits for efficient lighting solutions.
These applications benefit from the MOSFET's low on-resistance and high-speed switching characteristics.

Package

The IPD65R190C7 is a power MOSFET from Infineon Technologies, typically packaged in a TO-252 (DPAK) package. This type of packaging is designed for surface mounting on PCBs, offering a compact form factor suitable for high-efficiency power conversion applications.

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